SMDB12CTR Circuit Protection

Current - Peak Pulse (10/1000µs):	1A
Supplier Device Package:	8-SO
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 125°C (TJ)
Capacitance @ Frequency:	94pF @ 1MHz
Applications:	General Purpose
Power Line Protection:	No
Power - Peak Pulse:	500W
Series:	--
Voltage - Clamping (Max) @ Ipp:	19V
Voltage - Breakdown (Min):	13.3V
Voltage - Reverse Standoff (Typ):	12V (Max)
Bidirectional Channels:	4
Type:	Zener
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

TVS - Diodes, also known as Transient Voltage Suppressors (TVS), are semiconductor devices designed to protect high speed, electrical circuits, including data line and power circuits, from transient voltage overshoot and other surge events. The TVS diode utilizes a clamping action to reduce the peak voltage on a circuit in order to prevent damage due to an overvoltage condition. The TVS diode acts as a voltage regulator or surge protector by redirecting current from the surge event to the ground. The SMDB12CTR application field for TVS – Diodes is applicable to protect data that uses the USB 2.0 port and other power protection devices typically designed for electronics, which are described here. It is designed to protect sensitive electronic components from transient power surges and transients. The SMDB12CTR can be used in applications such as USB port protection (2.0 and greater); protection of ICs from ESD (electro-static discharge); device power protection; and protection from overvoltage/overcurrent conditions. The SMDB12CTR has a maximum power rating of 7.5A, and its forward leakage current is typically less than 5mA. The working principle is based on the principle of positive-clamp action. When the diode is subjected to an overvoltage, the diode behaves as an open circuit, exhibiting very high impedance. The diode shunts part of the current produced by the surge to ground, reducing the quality of the electrical charge on the protected line. The amount of current diverted to the ground is proportional to the clamping voltage, which depends on the value of the breakdown voltages associated with the diode. The devices feature positive-clamp functionality, meaning they clamp the voltage at a level determined by the reverse breakdown characteristics of the protection diode. The device is not solely a clamp element but also used in combination with other components in an appropriate circuit. Depending on the diode type, the clamping voltage can be either constant or adjustable based on external circuit connections. TVS devices are available in a variety of form factors and technologies, including silicon, zener diodes, avalanche breakdown diodes, and proprietary technologies. The SMDB12CTR series of TVS Diodes is designed with a low clamping voltage and fast response time. The device provides reliable, capacitive-clamp, overvoltage protection with a low capacitance across the protected circuit. The SMDB12CTR series is designed with a low clamping voltage and ultrafast response time (minimum of 1 ns). The device can also provide protection from ESD (electrostatic discharge). In conclusion, the SMDB12CTR is a high-performance TVS diode for use in high-speed data line protection, power supply spike protection, and IC protection from ESD. The device is designed to have low clamping voltage, ultrafast response time, and low capacitance across the protected circuit. The SMDB12CTR is designed to be used in applications such as USB port protection (2.0 and greater); protection from ESD; power supply surge protection; and protection from overvoltage/overcurrent conditions.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description