SMLJ60S05-TP Allicdata Electronics
Allicdata Part #:

SMLJ60S05-TPMSTR-ND

Manufacturer Part#:

SMLJ60S05-TP

Price: $ 0.29
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE GEN PURP 50V 6A DO214AB
More Detail: Diode Standard 50V 6A Surface Mount DO-214AB (SMC)
DataSheet: SMLJ60S05-TP datasheetSMLJ60S05-TP Datasheet/PDF
Quantity: 1000
3000 +: $ 0.25931
6000 +: $ 0.24696
Stock 1000Can Ship Immediately
$ 0.29
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: SMLJ60S05
Description

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SMLJ60S05-TP application field and working principle

Introduction

SMLJ60S05-TP is a low VF Ultra-Fast Low Profile Single Rectifier Diode designed to replace a 1A rectifier diode in an ultra-fast low profile package. It comprises a single die in a leadless Surface Mounted Device (SMD) package with a very tight J-bend in the leads. This device is designed to be employed in very low profile, high frequency and high accuracy applications.

Application Field

This SMLJ60S05-TP is mainly used in high frequency switch-mode power supply and SCR or TRIAC controllers. It is also suitable for General Rectification and Reverse Battery Protection.

Features

  • Ultra low VF
  • Very Low Profile
  • High Conductivity
  • Ultra-fast recovery time
  • High reliability

Working Principle

SMLJ60S05-TP is a low VF Ultra-Fast Low Profile Single Rectifier Diode. It is built up with a p-n junction diode that protects the circuit from reverse voltage. The diode device works in two stages; forward bias and reverse bias.

Forward Biasing

Forward bias occurs when the P side of the diode is positive with respect to the N side. This forward bias allows the current to flow from the P side to the N side, because the P side is more positive than N side. Therefore, the electrons flow from the N side to the P side, forming a forward bias condition. The forward bias condition causes the electric field to reduce the depletion layer width, resulting in a rise in the drift velocity of the charge carriers. The electrons and holes move rapidly, while the light intensity decreases forming a low voltage drop at the P-N junction.

Reverse Biasing

Reverse bias occurs when the N side of the diode is made more positive than the P side. This causes the electric field to move towards the N side, thus increasing the depletion layer width and reducing the flow of electrons and holes. The higher electric field causes the majority of the current to be blocked. As a result, the forward bias condition causes a low voltage drop at the P-N junction, preventing the electric current from flowing in the reverse direction.

Conclusion

SMLJ60S05-TP is a low VF Ultra-Fast Low Profile Single Rectifier Diode. It is widely applied in high frequency switch-mode power supply and SCR or TRIAC controllers due to its low voltage drop at P-N junction and fast speed of current turn on and turn off. The diode works with two states; forward bias and reverse bias. Forward bias allows current to flow from the P side to the N side instead of backward; while reverse bias can prevent the current to flow in the opposite direction.

The specific data is subject to PDF, and the above content is for reference

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