SMMUN2111LT3G

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Introduction

SMMUN2111LT3G is a single, pre-biased NPN Silicon Bipolar Transistor designed for audio, general purpose switching and amplifier applications over a wide range of collector current, collector voltage and frequency. This device has a minimum breakdown voltage rating of 30 V and a maximum gain value of 600. It has a low noise figure of 1.5mV and low thermal resistance of 1.5°C/W. The device has an oxide-nitride-oxide (ONO) dielectric layer that provides high current gain and low leakage current. It is manufactured using advanced technologies to meet the stringent design requirements.

Application Areas

The SMMUN2111LT3G is ideal for applications that require high switching speeds, high current gain and low leakage current. It is suitable for audio, general purpose switching and amplifier applications. The device is suitable for usage in broadband linear amplifier applications, low noise logic applications, three-way consoles, audio amplifiers and driver circuits. The device is also suitable for automotive, telecom, datacom, medical, industrial and consumer applications. Additionally, the device is suitable for low-cost commercial grade equipment in heavily loaded applications.

Working Principle

The SMMUN2111LT3G is a NPN Silicon Bipolar Transistor that works by collecting the electrons at the base and transferring them to the collector-emitter. The base-emitter region acts as a forward-biased diode and the collector-base region acts a reverse-biased diode. It is a unipolar device with its n-type semiconductor material connected to the collector, p-type material connected to the base and n-type to the emitter. When a voltage is applied at the emitter, it induces a depletion layer at the base-collector junction, thus causing a current flow in the transistor. The current gain of the transistor is determined by the ratio of the collector current and the base current, and is known as the current gain of the device. The conductance of a transistor varies with the applied voltage and temperature, and this is known as the transconductance. The device is rated for a maximum collector voltage of 30 V and has low thermal resistance, making it suitable for high frequency applications.

Summary

The SMMUN2111LT3G is a single, pre-biased NPN Silicon Bipolar Transistor designed for audio, general purpose switching and amplifier applications over a wide range of collector current, collector voltage and frequency. It is suitable for high-speed switching, audio, broadband linear amplifier applications, low noise logic applications, three-way consoles, audio amplifiers and driver circuits. The device has an oxide-nitride-oxide (ONO) dielectric layer that provides high current gain and low leakage current. It has a low noise figure of 1.5mV and low thermal resistance of 1.5°C/W. The device is rated for a maximum collector voltage of 30 V and has low thermal resistance, making it suitable for high frequency applications.

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