SMMUN2116LT1G Allicdata Electronics
Allicdata Part #:

SMMUN2116LT1G-ND

Manufacturer Part#:

SMMUN2116LT1G

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS PNP 0.246W SOT-23
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: SMMUN2116LT1G datasheetSMMUN2116LT1G Datasheet/PDF
Quantity: 1000
21000 +: $ 0.00966
Stock 1000Can Ship Immediately
$ 0.01
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 246mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMUN21**L
Description

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The SMMUN2116LT1G is a single, pre-biased, bipolar junction transistor (BJT) that is capable of providing reliable performance in a wide variety of applications. The device itself is composed of two separate elements; a collector and an emitter. Both the collector and the emitter are constructed using a unique phosphorous-doped silicon substrate. This combination provides the transistor with excellent uniformity and repeatability as well as providing superior thermal and electrical characteristics.

The SMMUN2116LT1G can be used for a number of applications, including power transistors for audio, automotive, and industrial use; as well as for switching, linear amplifiers, and even medical equipment. The device\'s primary advantage is its ability to operate with a voltage as low as 1.8 volts, making it suitable for applications that require a low-voltage supply.

The SMMUN2116LT1G is also capable of providing reliable performance in DC-DC converters and voltage regulator circuits. The device provides excellent gain, high efficiency, and a wide dynamic range of input and output voltages. The pre-biased structure of the device allows it to operate with a lower quiescent current than other transistors, allowing for increased efficiency and power savings in applications.

The working principle of the SMMUN2116LT1G is fairly straightforward. When power is applied to the device, a small current passes from the collector to the emitter, which then triggers a larger current across the device. This larger current is regulated by the device\'s gain and is used to drive the desired circuit or application.

The SMMUN2116LT1G can be used in a variety of applications and provides reliable performance in a wide range of operating voltages and current levels. The device\'s low voltage requirement and pre-biased structure make it exceptionally efficient and are ideal for applications that require both increased efficiency and power savings.

The specific data is subject to PDF, and the above content is for reference

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