Resistor - Emitter Base (R2):	47 kOhms
Base Part Number:	MMUN21**L
Supplier Device Package:	SOT-23-3 (TO-236)
Package / Case:	TO-236-3, SC-59, SOT-23-3
Mounting Type:	Surface Mount
Power - Max:	246mW
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Series:	--
Resistor - Base (R1):	10 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	PNP - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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SMMUN2114LT1G

Application Field

SMMUN2114LT1G is a single, pre-biased transistors, in the general bipolar junction transistor (BJT) family. It is designed for general-purpose amplification, switching and signal processing applications. As one of its primary advantages, the SMMUN2114LT1G has high-frequency operation capabilities; its performance is optimized for simulated and directly measured systems, such as point-to-point and multi-carrier systems. The design of the SMMUN2114LT1G increases the robustness of general-purpose transistors and makes it suitable for applications that require high-frequency operation, as well as those that are limited in space. The SMMUN2114LT1G can operate in temperatures ranging from -65 degrees Celsius to 115 degrees Celsius and come in a variety of industry-standard packages.

Working Principle

The working principle of the SMMUN2114LT1G is based on the traditional bipolar junction transistor (BJT). In order to understand how the SMMUN2114LT1G works, it is important to understand the basic principles behind BJT operation. A typical BJT consists of a base region, a collector region, and an emitter region. A BJT has three terminals, known as the base, collector, and emitter. The main purpose of the base-collector junction is to provide a controlled path for electrons to flow from the emitter to the collector. Depending on the current flow, the base-collector junction can be either forward or reverse biased.When forward biased, electrons flow from the emitter to the collector. This electron flow is known as the collector current, which is controlled by the current entering the base-collector junction. When reverse biased, the base-collector junction acts as a barrier, preventing electron flow. As such, the SMMUN2114LT1G uses a base-collector junction to control electron flow, allowing for precision control of the collector current, which is necessary for high-frequency operation. Additionally, the SMMUN2114LT1G is pre-biased, meaning that the transistor is already partially forward biased and ready for use. In conclusion, the SMMUN2114LT1G is a single, pre-biased transistor designed for general-purpose amplification and switching. Its primary advantage is its high-frequency operation capabilities, which are enabled by its pre-biased operation and base-collector junction.

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