SMMUN2215LT1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	500nA
Power - Max:	246mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Base Part Number:	MMUN22**L

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.SMMUN2215LT1G Application Field and Working PrincipleThe SMMUN2215LT1G, also referred to as a “Single, Pre-biased, Bipolar Junction Transistor” (BJT), is a type of transistor developed specifically for use in high-performance, high-frequency applications. It has been designed to offer improved speed and increased stability, while also providing excellent thermal characteristics and long-term reliability. In order to fully appreciate the application fields and working principle of the SMMUN2215LT1G, it is important to first understand what a single, pre-biased BJT is.A BJT is a type of electronic device consisting of three terminals called the base, collector and emitter. It is made up of two semiconductor layers of opposite type, called the p-n junction. The base terminal is connected to the p-n junction, while the other two terminals are connected to the other semiconductor layer. When current from the base terminal is applied, it induces a current between the collector and the emitter, which can then be controlled by adjusting the current between the base and the collector.The SMMUN2215LT1G is characterized by its high output current, fast switching speed and low power consumption, as well as its improved temperature stability. It has a nominal current gain of 200, which is more than double the current transistors of similar size. Furthermore, this device features an improved thermal design, with a junction-to-case thermal resistance as low as 0.2°C/W. Its high input impedance also allows for the use in various applications, such as high-frequency amplifiers and switching systems.Due to its properties, the SMMUN2215LT1G is ideal for use in applications such as consumer electronics, automotive electronics and other related industries. In consumer electronics, these transistors are often used in power supplies, video processing and television tuners. In automotive applications, they can be found in audio amplifiers, DC-DC convertors and engine control systems.The SMMUN2215LT1G also features a unique capability known as pre-biasing. This allows for improved biasing arrangements for forward- and reverse-bias enabling enhanced stability, higher gain and lower noise performance. Pre-biasing involves maintaining the bias conditions of the base-collector junction at a low current, reducing the necessary amount of time for the biasing voltage to adjust the circuit. This ensures that the device remains stable at all times and offers improved performance in applications such as linear amplifiers and communications equipment. In order to operate the SMMUN2215LT1G correctly, a certain amount of electrical conditions must be met. Firstly the voltage across the emitter-base junction must exceed a minimum given value for the device to begin conducting. Furthermore, the current between the collector and the emitter must also be in excess of a certain minimum value in order for signals to pass through the device.The SMMUN2215LT1G is also designed with longevity in mind, featuring a long-life design which is estimated to last around 500,000 hours. This is due to its robust structure and advanced fabrication process, which ensures high levels of reliability and durability.In conclusion, the SMMUN2215LT1G is a single, pre-biased BJT transistor with outstanding performance in high-frequency applications. Its high gain and low power consumption, coupled with a reliable long-life design make it an ideal choice for a range of applications. Its ability to pre-bias the device makes it an even better choice as it offers improved stability and lower noise performance in linear as well as communications engineering.

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