SMZJ3795AHE3/5B

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Voltage - Zener (Nom) (Vz):	18V
Tolerance:	±10%
Power - Max:	1.5W
Impedance (Max) (Zzt):	12 Ohms
Current - Reverse Leakage @ Vr:	5µA @ 13.7V
Operating Temperature:	-55°C ~ 150°C
Mounting Type:	Surface Mount
Package / Case:	DO-214AA, SMB
Supplier Device Package:	DO-214AA (SMBJ)
Base Part Number:	SMZJ3795

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SMZJ3795AHE3/5B is a single zener diode designed for military applications. This diode has low power consumption and a high-efficiency operation. The SMZJ3795AHE3/5B is able to provide stable, low-current performance in conditions with high temperature and pressure. The body of the diode is made with epoxy for durability, and can withstand extreme temperature and pressure. The SMZJ3795AHE3/5B has a wide operating temperature range and is ideal for applications in extreme environmental conditions. The SMZJ3795AHE3/5B has a reverse bias voltage of 37 volts and a forward current of 120 milliamp. The maximum reverse leakage current is 13.5 microamp, and the power dissipation is around 500 milliwatt. The diode is capable of providing a stable output voltage in the presence of high temperature and pressure.The SMZJ3795AHE3/5B is primarily used in applications that require a high input voltage with low current consumption. This includes power supplies, defense systems, aircraft avionics, radio transceivers, and medical devices. The diode is also highly reliable and is capable of providing consistent performance in harsh operating conditions.The working principle of the SMZJ3795AHE3/5B is based on the Avalanche breakdown phenomenon. This diode allows a reverse current to flow when the applied reverse bias voltage exceeds the breakdown voltage. When the reverse current is flowing, the semiconductor material enters a high-noise zone, resulting in the breakdown of the shared electrons. The current then begins to flow, causing the diode to produce a near-constant output voltage.The SMZJ3795AHE3/5B can provide a stable, low-current performance, even in high-temperature and pressure environments. It is a reliable, durable, and highly efficient diode, and is suitable for a wide range of applications. The diode can provide consistent performance in harsh operating conditions and has the ability to withstanding extreme temperatures and pressures.

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