Allicdata Part #: | SMZJ3804A-E3/5B-ND |
Manufacturer Part#: |
SMZJ3804A-E3/5B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 43V 1.5W DO214AA |
More Detail: | Zener Diode 43V 1.5W ±10% Surface Mount DO-214AA (... |
DataSheet: | SMZJ3804A-E3/5B Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 43V |
Tolerance: | ±10% |
Power - Max: | 1.5W |
Impedance (Max) (Zzt): | 53 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 32.7V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMBJ) |
Base Part Number: | SMZJ3804 |
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The SMZJ3804A-E3/5B is a single Zener diode designed for applications where a medium power Zener is required to regulate voltage and/or provide reverse polarity protection. The diode has a breakdown voltage of 4.0-5.6 volts and is available in an Axial-Lead 2-Pin DO-213AA package.
SMZJ3804A-E3/5B is ideal for use in applications such as voltage regulation and/or reverse polarity protection for digital circuits and low and medium power analog design. The diode is able to provide protection to components in such situations, as it prevents excessive current flow and can prevent the damage that can occur due to high voltages.
The general working principle behind epitaxial Zener diodes is tunneling. Tunneling is the phenomenon of electrons traveling through a potential barrier, even though the barrier is high enough to prevent the electrons from passing through it normally. In this case, when the applied reverse voltage is greater than the Zener breakdown voltage, a number of electrons are able to pass through the junction due to tunneling. This provides a path for the current to flow and for the voltage to be regulated down to a constant level.
The SMZJ3804A-E3/5B has the advantage of being a compact and low-cost device, allowing it to be used in portable and limited-space electronic applications. Its design provides for increased operating temperature range and higher reliability and also provides for better power dissipation.
The SMZJ3804A-E3/5B is a self-biased device, requiring no additional external components for operation. Its unique two-peaked metal-to-silicon selective diffusion technology ensures the breakdown voltage is stable over the operating temperature range of -55°C to +125°C.
In summary, the SMZJ3804A-E3/5B is an epitaxial Zener diode designed for applications where medium power Zener is required to regulate voltage and/or provide reverse polarity protection. It operates on tunneling principle and is designed to be a compact, low-cost, self-biased device, with high reliability and stable breakdown voltage over a wide operating temperature range.
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