SMZJ3805AHE3/5B

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The SMZJ3805AHE3/5B is a Zener diode created by Shenzhen Micro-Chip Technology Co. Ltd. It is a single-chip, low-voltage diode intended for use in a variety of applications. The diode is rated for a breakdown voltage of 3.8V with a 375 mW of power dissipation. Its maximum junction temperature is 175°C and its maximum clamp current is 6.30 A.

The SMZJ3805AHE3/5B is often used in a wide range of applications, including automotive, home appliance, telecommunications and power supply. The diode can provide voltage regulation and protection against transients, as well as a stable voltage across the device. Additionally, its low capacitance and inductance also make it ideal for designs that require high speed switching.

The working principle of the SMZJ3805AHE3/5B relies on a single conductive pathway through the junction of two layers of N-type and one layer of P-type doped semiconductor material. As current is applied to the diode, it will build up a built-in electric field, which is necessary for the device to function. As current flows through the diode, it will also create a voltage across the junction, which will cause the breakdown voltage to be reached. Once a breakdown voltage level is reached, current will flow through the diode, thus creating a stable, regulated output.

Overall, the SMZJ3805AHE3/5B is a versatile diode, created for a variety of applications. The diode offers excellent voltage regulation, protection against transients, and low capacitance and inductance, making it ideal for high-speed switching designs. Along with its low voltage requirements, the diode also offers a high power dissipation rate, making it one of the most reliable and versatile diodes on the market.

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