SN75469DR Allicdata Electronics
Allicdata Part #:

296-36726-2-ND

Manufacturer Part#:

SN75469DR

Price: $ 0.27
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: TRANS 7NPN DARL 100V 0.5A 16SOIC
More Detail: Bipolar (BJT) Transistor Array 7 NPN Darlington 10...
DataSheet: SN75469DR datasheetSN75469DR Datasheet/PDF
Quantity: 1000
2500 +: $ 0.23986
5000 +: $ 0.22844
Stock 1000Can Ship Immediately
$ 0.27
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 7 NPN Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: --
Power - Max: --
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
Base Part Number: SN75469
Description

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The SN75469DR is an array of four independent NPN transistors that are encapsulated in one durable shell. These transistors have many applications but are especially useful in powering larger devices and amplifying signals. This article will cover the SN75469DR application field and its working principle.

The SN75469DR is most commonly used in high power applications, as it has a maximum power dissipation of 3.2 watts. This makes it well-suited for amplifying signals on pre-stages of larger devices, such as portable radios or sound systems. Additionally, the SN75469DR is often used as a driver in AC appliances or as part of an HVAC system.

Apart from using the SN75469DR in different applications, it is also often used in amplifiers and drivers. This transistor array amplifies weak signals and drives current to numerous different electrical components. The SN75469DR is a great choice for these applications due to its low leakage current and low noise between 0.5 and 4 volts.

In addition to its many applications, the SN75469DR is also quite popular for its working principle. The SN75469DR is based on the NPN bipolar junction transistor (BJT). This BJT operates on a base-collector bias, which helps to reduce noise of generated signals. The NPN transistor also has the added benefit of not only amplifying weak signals but also providing protection against high voltage.

The SN75469DR is a great choice for powering larger devices, amplifying signals, and driving current. Its use of NPN transistors allows it to provide both power and protection, thus ensuring its versatility and reliability. By understanding the SN75469DR application field and its working principle, one can confidently choose the right transistor array for their specific needs.

The specific data is subject to PDF, and the above content is for reference

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