SNSS20101JT1G Allicdata Electronics
Allicdata Part #:

SNSS20101JT1G-ND

Manufacturer Part#:

SNSS20101JT1G

Price: $ 0.10
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 20V 1A SC-89
More Detail: Bipolar (BJT) Transistor NPN 20V 1A 350MHz 225mW S...
DataSheet: SNSS20101JT1G datasheetSNSS20101JT1G Datasheet/PDF
Quantity: 1000
3000 +: $ 0.08732
Stock 1000Can Ship Immediately
$ 0.1
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Power - Max: 225mW
Frequency - Transition: 350MHz
Operating Temperature: --
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SC-89-3
Base Part Number: NSS20101
Description

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The SNSS20101JT1G is a single bipolar junction transistor, otherwise referred to as a BJT, and because of its highly useful form factor and impressive design it’s a popular choice for a wide array of applications. Capable of carrying a large current flow, the SNSS20101JT1G has been found to be suitable for both linear and digital applications and because of this, this highly versatile BJT has been seen in use across many industries, whether it’s as a component of audio state amplifiers, as part of a control circuit, or as a component in a device controlling power output.

The SNSS20101JT1G BJT consists of three layers of semiconductor material, between which three corresponding elements of a voltage applied to three different terminals will give adequate notice, leading to a current between the two other terminals. The three terminals of the SNSS20101JT1G can thus be separated into two, where one will be responsible for the current output, while the other two will control the current flow.

The three main components of the SNSS20101JT1G include the collector, base and emitter, each of which are identified by their corresponding pins in the component’s package. The collector’s purpose involves collecting the majority of the current, while the base is the element of the SNSS20101JT1G that regulates the current output, as well as the current flow. Finally, the emitter is responsible for releasing the majority of the current after the device has been triggered. As the SNSS20101JT1G is usually used within an amplifier circuit, the base and collector electrodes are the two main active areas in the circuit, and current will flow from the collector to the emitter once the base becomes activated.

The SNSS20101JT1G also owns a few additional features. Atop the base and collector terminals, there is a resistor that serves to control the base current, which helps control the entire current flow through the device. This kind of hardware protection allows fix-fasten devices, such as transistors, to be able to recover from any possible voltage spikes without much damage. There is also a current flow limiter, which allows the device to maintain a certain base and output flow, even over a prolonged period of time. The coupling to the collector and emitter terminals have their own connections, and can be used to transfer signals.

In conclusion, the SNSS20101JT1G is an extremely remarkable single bipolar junction transistor. It works in a way that allows it to be suitable for linear and digital operations, and it can be easily integrated into circuits with fix-fasten characteristics. Because of its impressive components, such as the base and collector terminals, the SNSS20101JT1G is becoming increasingly useful in many industries, with popular applications in amplifiers and for controlling power output in various devices.

The specific data is subject to PDF, and the above content is for reference

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