Allicdata Part #: | SNSS30201MR6T1G-ND |
Manufacturer Part#: |
SNSS30201MR6T1G |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 30V 2A TSOP-6 |
More Detail: | Bipolar (BJT) Transistor NPN 30V 2A 300MHz 535mW S... |
DataSheet: | SNSS30201MR6T1G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.13062 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 500mA, 5V |
Power - Max: | 535mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 |
Supplier Device Package: | 6-TSOP |
Base Part Number: | NSS30201 |
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The SNSS30201MR6T1G is a single, N-channel, depletion-mode, MOSFET transistor (metal-oxide-semiconductor field-effect transistor). As a type of transistor, the SNSS30201MR6T1G is divided into two main categories - bipolar (BJT) transistors and field-effect transistors (FETs). BJT transistors are used to amplify and switch signals, while FET transistors are used as switches.
The SNSS30201MR6T1G is a specific type of FET transistor, commonly referred to as a depletion-mode MOSFET (D-MOSFET). D-MOSFETs are characterized by having their drain-source voltage at a maximum when the gate-source voltage is low. In other words, when the gate-source voltage is high, the drain-source voltage is low. This makes them very useful as switches, allowing control of the transistor\'s conductivity by varying the gate-source voltage.
The SNSS30201MR6T1G is used in a variety of applications, such as in mixed-signal analog and digital switching, industrial motor control, and LED driver circuits. It is especially useful in power supply circuits, as it is able to provide low on-resistance to provide low switching losses, and null drain-source leakage current, allowing efficient power delivery. Due to its low gate voltage threshold, it can be used in a wide range of voltage supply applications, from 3.3 V to 5 V.
The SNSS30201MR6T1G works by controlling the flow of current between its source and drain terminals. A voltage is applied to its gate terminal, and this allows or restricts the amount of current flowing between the source and drain. When the gate voltage is low, the drain-source voltage is at a maximum, allowing current to flow freely. However, when the gate voltage is high, the drain-source voltage is low, restricting the flow of current.
One advantage of using the SNSS30201MR6T1G is its very low on-resistance. This means that it can provide efficient power delivery, and can be used in low-voltage applications. It also has excellent noise immunity, making it resistant to noise and interference. Additionally, it is a robust device, meaning that it has a long lifetime and is reliable in operation.
In summary, the SNSS30201MR6T1G is a single N-channel, depletion-mode MOSFET transistor. It is mainly used in power supply circuits, as it can provide low on-resistance to provide low switching losses, and null drain-source leakage current. It also has excellent noise immunity and a long lifetime, making it a reliable and efficient switch.
The specific data is subject to PDF, and the above content is for reference
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