Allicdata Part #: | SNSS35200MR6T1G-ND |
Manufacturer Part#: |
SNSS35200MR6T1G |
Price: | $ 0.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 35V 2A TSOP-6 |
More Detail: | Bipolar (BJT) Transistor PNP 35V 2A 100MHz 625mW S... |
DataSheet: | SNSS35200MR6T1G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.16977 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 35V |
Vce Saturation (Max) @ Ib, Ic: | 310mV @ 20mA, 2A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1.5A, 1.5V |
Power - Max: | 625mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 |
Supplier Device Package: | 6-TSOP |
Base Part Number: | NSS35200 |
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The SNSS35200MR6T1G (MR6T1G for short) is a type of single bipolar junction transistor (BJT) used in many applications. It is commonly used in data communication, detection, power management and others. The MR6T1G has excellent performance and is relatively easy to use. It is well-suited for use in demanding environments.
The MR6T1G consists of the base, collector, and emitter terminals. These terminals are housed in an isolation package. This isolation package minimizes the effect of temperature change on the transistor\'s performance. The isolation package also helps to protect the transistor from mechanical and environmental damage.
The MR6T1G is a NPN transistor, meaning that its collector is connected to the base. Under normal operating conditions, its collector-base junction is forward biased due to the applied electrical current. The current is then amplified by the transistor – a process known as current gain. The amplified current is then used to pass the input signal to the output.
The MR6T1G is mainly used in data communication. It is especially suitable for use in data transmission applications, such as Ethernet and Wi-Fi. It has a high gain-bandwidth product, which makes it suitable for use in signal amplification. It is also commonly used in radio frequency (RF) signal amplification and signal processing.
The MR6T1G is also commonly used in detection applications. It is typically used in detection systems that require high signal-to-noise ratio and precise timing. These systems often include motion and speed sensors, smoke and heat detectors, distance sensors, and others.
The MR6T1G is also often used in power management applications. It is commonly used to regulate power in computer systems, industrial machinery, and other applications. The transistor is used to reduce the current to a safe level, preventing the system from damage due to excessive power.
In addition to the aforementioned applications, the MR6T1G is also used in a variety of other applications, including amplifiers, motor control applications, and more. It is a reliable, high-performance transistor and is well-suited for use in many different applications.
The specific data is subject to PDF, and the above content is for reference
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