SQ1902AEL-T1_GE3 Allicdata Electronics
Allicdata Part #:

SQ1902AEL-T1_GE3-ND

Manufacturer Part#:

SQ1902AEL-T1_GE3

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2N-CH 20V POWERPAK SC70-6
More Detail: Mosfet Array 2 N-Channel (Dual) 20V 780mA (Tc) 430...
DataSheet: SQ1902AEL-T1_GE3 datasheetSQ1902AEL-T1_GE3 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.12128
Stock 1000Can Ship Immediately
$ 0.13
Specifications
Series: Automotive, AEC-Q101, TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 780mA (Tc)
Rds On (Max) @ Id, Vgs: 415 mOhm @ 660mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Power - Max: 430mW
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual
Description

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SQ1902AEL-T1_GE3 Application Field and Working Principle

SQ1902AEL-T1_GE3 is a kind of transistor array consisting of three N-channel enhancement-mode MOSFETs. It is an important component in the field of transistors and is widely used in multiple electronic applications. To understand its application field and working principle, this article will provide a detailed overview.

Application Field

The SQ1902AEL-T1_GE3 transistor array can be used in various electronic circuits, making it a versatile component. It is often used in electronic circuits containing multiple transistors, such as voltage converters, motor drives, power amplifiers and switching applications. In addition, it is also frequently used in digital circuits, including signal mixers and signal processing circuits.

Working Principle

The SQ1902AEL-T1_GE3 is an integrated circuit that contains three N-channel enhancement-mode MOSFETs. It operates by controlling the flow of electrons between the source and drain terminals. The gate terminal controls the flow of electrons, allowing the user to modulate the current levels with a varying gate voltage. By controlling the amount of current flowing between the source and drain, the user can control the voltage output of the device. This makes the SQ1902AEL-T1_GE3 a great choice for use in voltage control applications, as it can provide a wide range of output voltages.

The three N-channel enhancement-mode MOSFETs contained in the SQ1902AEL-T1_GE3 operate in series, meaning that their effective drain-source resistance is determined by the sum of the individual resistances. This flexibility allows the user to adjust the total output voltage to meet the needs of a given application. Additionally, the characteristics of N-channel MOSFETs make the SQ1902AEL-T1_GE3 ideal for low-voltage control applications, as the MOSFETs can be switched with very low voltages.

Conclusion

In conclusion, the SQ1902AEL-T1_GE3 is a powerful transistor array that can be used in a variety of electronic applications, thanks to its three N-channel enhancement-mode MOSFETs. Its unique characteristics, such as its low gate voltage requirement and ability to control voltage levels, make it a great choice for voltage control applications. It is an incredibly versatile component and is sure to be a great choice for any project that requires multiple transistors.

The specific data is subject to PDF, and the above content is for reference

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