| Allicdata Part #: | SQ1902AEL-T1_GE3-ND |
| Manufacturer Part#: |
SQ1902AEL-T1_GE3 |
| Price: | $ 0.13 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET 2N-CH 20V POWERPAK SC70-6 |
| More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 780mA (Tc) 430... |
| DataSheet: | SQ1902AEL-T1_GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.12128 |
Specifications
| Series: | Automotive, AEC-Q101, TrenchFET® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | 2 N-Channel (Dual) |
| FET Feature: | Standard |
| Drain to Source Voltage (Vdss): | 20V |
| Current - Continuous Drain (Id) @ 25°C: | 780mA (Tc) |
| Rds On (Max) @ Id, Vgs: | 415 mOhm @ 660mA, 4.5V |
| Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 1.2nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 75pF @ 10V |
| Power - Max: | 430mW |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | PowerPAK® SC-70-6 Dual |
| Supplier Device Package: | PowerPAK® SC-70-6 Dual |
Description
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SQ1902AEL-T1_GE3 Application Field and Working Principle
SQ1902AEL-T1_GE3 is a kind of transistor array consisting of three N-channel enhancement-mode MOSFETs. It is an important component in the field of transistors and is widely used in multiple electronic applications. To understand its application field and working principle, this article will provide a detailed overview.Application Field
The SQ1902AEL-T1_GE3 transistor array can be used in various electronic circuits, making it a versatile component. It is often used in electronic circuits containing multiple transistors, such as voltage converters, motor drives, power amplifiers and switching applications. In addition, it is also frequently used in digital circuits, including signal mixers and signal processing circuits.Working Principle
The SQ1902AEL-T1_GE3 is an integrated circuit that contains three N-channel enhancement-mode MOSFETs. It operates by controlling the flow of electrons between the source and drain terminals. The gate terminal controls the flow of electrons, allowing the user to modulate the current levels with a varying gate voltage. By controlling the amount of current flowing between the source and drain, the user can control the voltage output of the device. This makes the SQ1902AEL-T1_GE3 a great choice for use in voltage control applications, as it can provide a wide range of output voltages.The three N-channel enhancement-mode MOSFETs contained in the SQ1902AEL-T1_GE3 operate in series, meaning that their effective drain-source resistance is determined by the sum of the individual resistances. This flexibility allows the user to adjust the total output voltage to meet the needs of a given application. Additionally, the characteristics of N-channel MOSFETs make the SQ1902AEL-T1_GE3 ideal for low-voltage control applications, as the MOSFETs can be switched with very low voltages.
Conclusion
In conclusion, the SQ1902AEL-T1_GE3 is a powerful transistor array that can be used in a variety of electronic applications, thanks to its three N-channel enhancement-mode MOSFETs. Its unique characteristics, such as its low gate voltage requirement and ability to control voltage levels, make it a great choice for voltage control applications. It is an incredibly versatile component and is sure to be a great choice for any project that requires multiple transistors.The specific data is subject to PDF, and the above content is for reference
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SQ1902AEL-T1_GE3 Datasheet/PDF