SQ1912EH-T1_GE3

Series:	Automotive, AEC-Q101, TrenchFET®
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	800mA (Tc)
Rds On (Max) @ Id, Vgs:	280 mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id:	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	1.15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	75pF @ 10V
Power - Max:	1.5W
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SC-70-6

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SQ1912EH-T1_GE3 Application Field and Working Principle

Introduction

SQ1912EH-T1_GE3 is a type of integral power control logic displacement. It is mainly made of MOSFET, and is designed to control the high current electrical system, such as AC motors and illumination. Compared to regular integrated circuits, it has higher breakdown voltage, so it is suitable to be applied in heavy duty system.

Application Field

The SQ1912EH-T1_GE3 is mostly used in industrial drive system, such as temperature control and regulation, traction control and high power inverter system. It can be used in AC/DC drives, dedicated industrial drives, and energy conserving welding systems.SQ1912EH-T1_GE3 can also be used for HVAC equipment, motor control system, and industrial equipment. It is suitable for safety insulation, and it is applicable for the steady power supply in various power management systems.

Working Principle

The SQ1912EH-T1_GE3 works by utilizing a power MOSFET array to control and regulate the current flow. It is designed to provide the highest current capacity with the lowest on-resistance of any common power MOSFET available today.The main principle of the SQ1912EH-T1_GE3 is that the gate driver acts like a power switch to allow current to flow when the proper voltage is detected. The gate is opened or closed depending on the gate voltage, so when the voltage rises above a specified level, the MOSFET array lets current flow, and when the voltage drops below a specific level, the array shuts off the current.

Benefits

The SQ1912EH-T1_GE3 has several benefits. First, it provides low RDSON, which means that it has low on-resistance. This means that it can provide high efficiency operation and generate less heat, which makes it more reliable and long lasting. Additionally, it has a wide operating temperature range and can operate in temperatures above 150°C. Another benefit of the SQ1912EH-T1_GE3 is that it is designed to reduce EMI, improve thermal conductivity, and is designed with low power consumption. It also is optimized to reduce parasitic voltage drop and increase reliability due to its improved thermal stability. Furthermore, it is designed to reduce on-chip impedance and provide greater current capacity. Finally, the SQ1912EH-T1_GE3 is compliant with RoHS and Halogen-Free regulations, and can also be customized for specific application needs.

Conclusion

The SQ1912EH-T1_GE3 is a type of integral power control logic displacement that is primarily made of MOSFET, and it is designed to control the high current electrical systems. It is suitable for various power management applications, such as HVAC equipment, motor control system, and industrial equipment. It works by utilizing a power MOSFET array to control and regulate the current flow. The SQ1912EH-T1_GE3 offers several benefits, such as low on-resistance and high efficiency, as well as low power consumption and improved thermal stability. Furthermore, it is compliant with RoHS and Halogen-Free regulations, and is customizable for specific application needs.

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