Allicdata Part #: | SQ4282EY-T1_GE3-ND |
Manufacturer Part#: |
SQ4282EY-T1_GE3 |
Price: | $ 0.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2 N-CHANNEL 30V 8A 8SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 8A (Tc) 3.9W S... |
DataSheet: | SQ4282EY-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.40166 |
Series: | Automotive, AEC-Q101, TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Rds On (Max) @ Id, Vgs: | 12.3 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 2367pF @ 15V |
Power - Max: | 3.9W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
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The SQ4282EY-T1_GE3 is a type of transistor called a field-effect transistor (FET). This type of transistor is better suited to applications where the control of current is key in electronic devices.
The main purpose of a field-effect transistor is to amplify or switch electric current and voltage. The SQ4282EY-T1_GE3 is a type of FET called a metal-oxide-semiconductor field-effect transistor (MOSFET). This type of FET employs an insulated gate to control electric current flow between source and drain terminals.
The SQ4282EY-T1_GE3 is part of a family of FETs called MOSFET arrays. This type of FET offers a cost-effective way to control multiple current channels in a single device. They are well-suited for applications that require the use of multiple transistors to conduct a single current operation.
The primary advantage of the SQ4282EY-T1_GE3 is its flexibility. This FET array utilizes a single chip design, which means that it can be used in a variety of applications and tailored to meet specific needs. For example, the chip can be configured to control current channels in data storage devices, motor control, and even in the processing of signals.
The SQ4282EY-T1_GE3 is also capable of operating with high levels of efficiency. This is due to its use of insulation gates to control current flow, which is far more efficient than using conventional transistors. This makes it well-suited for high-voltage and high-power applications.
When using the SQ4282EY-T1_GE3, it is important to understand its working principle. This FET works by using an electrical charge on its gate to control the current flow between the source and drain terminals. When the electric charge is high, the current flow is blocked; when it is low, the current flow is allowed. This is known as “gate-control”, and is a fairly straightforward process.
It is also important to understand that the SQ4282EY-T1_GE3 is vulnerable to static electricity. If static electricity builds up on the chip, it can cause short circuits or even permanent damage. To prevent this, it is important to use proper static control practices and maintain the correct storage conditions.
The SQ4282EY-T1_GE3 is a versatile and reliable type of FET, making it well-suited for a wide range of applications. This includes digital switching, motor control, and signal processing. Additionally, its efficiency, low power usage, and cost-effective design make it a popular choice for many circuit designs.
The specific data is subject to PDF, and the above content is for reference
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