Allicdata Part #: | SQ4284EY-T1_GE3TR-ND |
Manufacturer Part#: |
SQ4284EY-T1_GE3 |
Price: | $ 0.53 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 40V 8A 8SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 40V 3.9W Surface ... |
DataSheet: | SQ4284EY-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.48179 |
Series: | Automotive, AEC-Q101, TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | 13.5 mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 2200pF @ 25V |
Power - Max: | 3.9W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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Square semiconductor has achieved a breakthrough in the field of integrated Modules with the introduction of the SQ4284EY-T1_GE3, a unique module for power transistor arrays. The SQ4284EY-T1_GE3 module is a high-performance power transistor array capable of switching between high and low performance states. These states are adjustable, allowing you to determine the exact power requirements for a given application.
The SQ4284EY-T1_GE3 is specifically designed for applications that require low on-resistance, fast switching times, avalanche protection, and ruggedness. The SQ4284EY-T1_GE3 is an ideal choice for power management applications such as motor control and voltage regulation.
The SQ4284EY-T1_GE3 uses four N-channel MOSFETs in a single package. This package also includes diodes for avalanche protection and control logic for switching between N- and P-channel modes. It has a low gate-source threshold voltage, which reduces gate current and saves power. Additionally, it offers a wide range of operating currents from 10mA to 25A. The flat and low gate-source capacitance of this module enables fast switching and low power dissipation. It can also be used as a synchronous rectifier in flyback applications.
The major applications of the SQ4284EY-T1_GE3 module include: power supply rectification, motor control, inverters, converters, motor drivers and other power management applications. It is especially useful for applications that require fast switching, high efficiency, and high-voltage protection. Additionally, the SQ4284EY-T1_GE3 provides reliable operation with its avalanche protection and temperature compensation.
The working principle of the SQ4284EY-T1_GE3 module involves switching between N- and P-channel modes. When a suitable voltage is applied to the module, the voltage difference between the gate and source terminals will cause a pull-up current to flow through the drain source of the N-channel MOSFETs. This current then triggers the associated diodes, causing them to forward bias and turn on the P-channel MOSFETs. This creates a high gain output and allows the device to switch between high and low performance states.
The SQ4284EY-T1_GE3 is a versatile module that is suitable for various applications. It provides excellent power efficiency and a wide range of operating currents. The avalanche protection, temperature compensation, and fast switching capability make it suitable for a wide range of power management applications. Furthermore, the low on-resistance and wide operating voltage make it an ideal solution for high-performance requirements.
The specific data is subject to PDF, and the above content is for reference
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