SQS944ENW-T1_GE3 Allicdata Electronics
Allicdata Part #:

SQS944ENW-T1_GE3TR-ND

Manufacturer Part#:

SQS944ENW-T1_GE3

Price: $ 0.27
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CHAN 40V
More Detail: Mosfet Array 2 N-Channel (Dual) 40V 6A (Tc) 27.8W ...
DataSheet: SQS944ENW-T1_GE3 datasheetSQS944ENW-T1_GE3 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.23984
Stock 1000Can Ship Immediately
$ 0.27
Specifications
Series: Automotive, AEC-Q101, TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 615pF @ 25V
Power - Max: 27.8W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8W
Supplier Device Package: PowerPAK® 1212-8W
Description

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SQS944ENW-T1_GE3 is a type of transistor array designed and manufactured to be used in a variety of electronic applications. This type of array is comprised of four 150 mΩ in parallel low side N-Channel MOSFETs. It is particularly suitable for high side switching applications in automotive field; being able to withstand temperatures up to +150°C junction temperature, with a maximum Vds of 60V and an On-resistance RDS(on) max of 7.8 mΩ. In addition, it is available in an extremely low package type and notable for its wide range of features, such as schottky diode protection and integrated metal interconnection for enhanced current flow and higher temperature capability.

SQS944ENW-T1_GE3 is an ideal choice for high side switching applications due to its relatively low on-resistance and wide temperature tolerance. It is commonly used in automotive applications, in power control and lighting systems, such as Headlamps, Tail lamps and Fog lamps. The SQS944ENW-T1_GE3 array is also a great choice for gate drivers and load switches, providing current flow up to 6A due to its integrated metal interconnections.

The working principle of the SQS944ENW-T1_GE3 array is based on its internal structure, which comprises four N-channel MOSFETs, each with an integrated schottky diode. When voltage is applied across the SQS944ENW-T1_GE3 array, the schottky diode will become forward biased, allowing current to flow between the source and drain terminals of the MOSFETs. Also, the integral gate will control the gate-to-source voltage, which will then determine whether the MOSFETs are turned off or on. When the gate-to-source voltage reaches a certain threshold, the MOSFETs will be turned on, allowing current to flow between the source and drain terminals.

SQS944ENW-T1_GE3 is a versatile type of transistor array suitable for use in a variety of electronic applications. Its low on-resistance and wide temperature tolerance makes it ideal for high side switching applications in the automotive field, such as headlamps, tail lamps and fog lamps. Its integrated schottky diode protection and metal interconnections makes it able to handle up to 6A of current flow, making it a great choice for gate drivers and load switches.

The specific data is subject to PDF, and the above content is for reference

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