
Allicdata Part #: | SQS966ENW-T1_GE3TR-ND |
Manufacturer Part#: |
SQS966ENW-T1_GE3 |
Price: | $ 0.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CHAN 60V |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 6A (Tc) 27.8W ... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.24677 |
Specifications
Series: | Automotive, AEC-Q101, TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Rds On (Max) @ Id, Vgs: | 36 mOhm @ 1.25A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 8.8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 572pF @ 25V |
Power - Max: | 27.8W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | PowerPAK® 1212-8W |
Supplier Device Package: | PowerPAK® 1212-8W |
Description
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The SQS966ENW-T1-GE3 is an advanced lateral P-Channel metal oxide semiconductor field effect transistor (MOSFET) from Sanyo that has been designed to work across a range of aquatic and industrial applications. In this article, the application area and working principle of the SQS966ENW-T1-GE3 will be discussed. The main purpose of the SQS966ENW-T1-GE3 is to provide power switching capability for a wide range of applications. It can be used as a main power switch for systems that are connected to mains power, and can also be used in low-voltage, low-current switching applications, making it suitable for a range of underwater and industrial applications.The SQS966ENW-T1-GE3 is a MOSFET array, which is a type of transistor that is formed by combining multiple smaller transistors into a single integrated circuit. The advantage of this arrangement is that it provides enhanced performance, as the electrical characteristics of each individual transistor are better than those of multiple transistors connected externally together.In order to achieve this improved performance, the MOSFET array uses a number of different techniques, including the use of a metal gate dielectric layer, which prevents the gate terminal of the transistor from shorting to the substrate. Additionally, a self-aligned process is used to ensure that the channel of the device is properly defined, and a faster switching speed is achieved by using a deeper gate trench structure.The working principle of the SQS966ENW-T1-GE3 is based on MOSFETs, which are three terminal devices that act as current controllers. When a voltage is applied to the drain terminal, it produces an electric field, which allows electrons to flow between the source and the drain. The gate terminal allows for the control of this current, as by changing the voltage applied to the gate, the electric field can be adjusted, which in turn allows for the control of the current flowing through the device.The SQS966ENW-T1-GE3 is a highly reliable and efficient device, and is capable of providing high levels of performance in a wide range of applications. It is well suited to a range of industries, including the medical and industrial sectors, where it can be used to control current and voltage in sensitive equipment.Overall, the SQS966ENW-T1-GE3 is a versatile and reliable transistor that has been designed to be used in a wide range of applications. Its use of advanced lateral P-Channel technology, combined with its self-aligned process and deeper gate trench structure, make it a highly efficient and effective device for a variety of applications. As such, it is an ideal choice for power switching applications in a range of industries.
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