Allicdata Part #: | SS110HM2G-ND |
Manufacturer Part#: |
SS110HM2G |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE SCHOTTKY 100V 1A DO214AC |
More Detail: | Diode Schottky 100V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | SS110HM2G Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.04181 |
Specifications
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 500mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 100µA @ 100V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 125°C |
Description
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Diodes - Rectifiers - Single
The SS110HM2G Diode, otherwise known as a 1A Schottky Rectifier, is a great example of just how much of an impact modern semiconductor diodes have had in making our lives easier. This diode has a wide range of applications and can be used for everything from voltage regulating to power rectification and protection in various electronic systems.The SS110HM2G diode is a single-phase, discrete, silicon-based rectifier with a low forward voltage drop and a high-temperature efficiency. It is designed for use in power supplies and motor applications, such as appliances and lighting systems. The device\'s substrate is made of high-temperature silicon dioxide, which provides a high degree of reliability and stability.The SS110HM2G diode is also very useful in devices that require high-speed switching. Its unique device structure, combined with its low on-state resistance, enable high-speed switching with minimal heat generation. These two factors make it suitable for applications such as photovoltaic cells, high-power LEDs and switching regulators.The diode’s forward-biased conduction is ensured by its temperature-resistant substrate material and metal contacts. Its metal contacts are made from aluminum, nickel-zinc and gold, which provide excellent thermal and electrical performance. The diode’s low voltage loss also helps to reduce power consumption in the form of heat energy loss, which helps ensure its long-term reliability.The SS110HM2G diode is designed to perform reliably under a range of temperatures and ambient conditions, making it suitable for a wide range of electronics applications. It has an operating temperature of -41°C to 125°C, and its storage temperature range is from -55°C to 150°C. The diode’s forward-biased conduction is also maintained within a wide range of reactive loads and input voltages.The working principle of the SS110HM2G diode is fairly straightforward. It uses Schottky diodes that are connected in parallel. As current passes through the device, the Schottky diodes create a voltage drop across the device, and this voltage drop, in turn, creates a barrier that prevents current from flowing in the opposite direction. Therefore, the diode works as a rectifier, blocking the flow of current that goes in the wrong direction.The SS110HM2G diode is a great example of powerful and reliable semiconductor technology that can be easily incorporated into a wide range of modern electronics applications. From voltage regulation to power rectification and protection, the diode’s high-quality components provide reliability and stability in a wide range of ambient conditions.The specific data is subject to PDF, and the above content is for reference
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