
Allicdata Part #: | SS115LHM2G-ND |
Manufacturer Part#: |
SS115LHM2G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE SCHOTTKY 150V 1A SUB SMA |
More Detail: | Diode Schottky 150V 1A Surface Mount Sub SMA |
DataSheet: | ![]() |
Quantity: | 1000 |
15000 +: | $ 0.03810 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 150V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 50µA @ 150V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The SS115LHM2G is a semiconductor diode designed to serve as a rectifier in electrical circuits. Specifically, it belongs to the category of single diodes, as it consists of only one layer of P-type material. This diode facilitates the conversion of alternating current (AC) to direct current (DC).
The SS115LHM2G is commonly used for high efficiency, high power, and high frequency applications. One popular application is in wind turbines, where electrical power is generated from wind energy and converted from AC to DC. Other common applications include variable speed drives, solar photovoltaic systems, and uninterruptible power supplies (UPS).
The SS115LHM2G is also characterized by its fast recovery time, allowing it to be used in circuits that must operate at high frequencies. It is designed with a low reverse leakage (LR) current, enabling it to maintain a low voltage drop across its junction. This makes it more power efficient than other types of rectifier diodes.
The working principle of the SS115LHM2G is based on the electro-mechanical phenomenon known as the PN junction. When a voltage is applied to two ends of the diode, the electrons in the P-type material (the anode side of the diode) move away from the junction. This creates a depletion layer, or a region of decreased electron density. As a result, a voltage potential is established, allowing electrons to flow only from the N-type material (the cathode side of the diode) to the P-type material.
When the voltage is removed, the electrons begin to move back to the junction, pushing the charge carriers in the P-type material back towards the N-type material. This inversion layer helps to prevent DC current from flowing back through the diode. This is what enables the SS115LHM2G to effectively convert AC to DC.
Overall, the SS115LHM2G is a reliable and efficient rectifier for a wide range of applications that require a fast recovery time and a low voltage drop. Its small size and low cost make it an ideal choice for many projects. It is often used for wind turbine, variable speed drive, and UPS applications, as well as other high efficiency, high power, and high frequency applications.
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