Allicdata Part #: | SS12HE3/61T-ND |
Manufacturer Part#: |
SS12HE3/61T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE SCHOTTKY 20V 1A DO214AC |
More Detail: | Diode Schottky 20V 1A Surface Mount DO-214AC (SMA) |
DataSheet: | SS12HE3/61T Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 20V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 500mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 200µA @ 20V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -65°C ~ 125°C |
Base Part Number: | SS12 |
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Diodes - Rectifiers - Single
The SS12HE3/61T is a silicon epitaxial diode for high-speed switching applications. It\'s well-suited for high-speed switching circuits, avalanche-arrayed circuits, anti-parallel circuits, super low impedance rectification, power supply units, and switching controllers.
The SS12HE3/61T has a reverse current surge rating of 1A and a forward voltage of 1.2V max. It also has a high reverse voltage rating of 600V. Its peak surge forward current is rated at 8A. Its repetitive peak reverse voltage is 600V.
The SS12HE3/61T features a low shear force of 6µN and a breakdown voltage of 8V max. Its storage temperature range is -40°C to +130°C. The SS12HE3/61T is available in the TO-220 package.
Working principle
The SS12HE3/61T is a fast switching diode that can be used in applications where the speed of the diode is critical. The diode is based on silicon epitaxial technology and enables fast switching times in a variety of applications.
The low forward voltage drop and high reverse voltage rating make the SS12HE3/61T diode suitable for a variety of applications, including rectifier bridges, inverters, and switching circuits. The diode has very low switching noise and is highly reliable.
The SS12HE3/61T diode is designed for fast switching applications and has a high reverse voltage rating of 600V. This high voltage makes the diode capable of switching high sources of current, making it suitable for high-power applications. The device can handle repetitive peak reverse currents up to 6A.
The SS12HE3/61T diode is compatible with various semiconductor processes and can be used as a single diode or in an arrayed diode configuration, depending on the specific application requirements. The diode\'s low shear force makes it suitable for switching at high speeds without sacrificing reliability.
Application field
The SS12HE3/61T is a silicon epitaxial diode that is suitable for a variety of applications, including rectifiers, inverters, and switching circuits. Its low forward voltage drop and high reverse voltage rating make it suitable for both low- and high-power applications. Its high speed switching capability makes it suitable for high frequency applications, such as power supplies and motor controllers.
The diode\'s low shear force and high surge current rating make it suitable for use in avalanche-arrayed circuits. Its fast switching capability also makes it suitable for use in low-impedance rectification, driving arrays, and switching controllers such as Light-Dimming circuits. The SS12HE3/61T can also be used in hysteresis circuits and motor protection circuits.
The SS12HE3/61T diode is also ideal for use in automotive electronics, where its low noise switching capability and high reverse voltage rating make it suitable for power supplies, motor controllers, and overvoltage protection circuits. The diode\'s fast switching can also be used in automotive lighting and communication systems.
The specific data is subject to PDF, and the above content is for reference
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