SS12L RTG

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	20V
Current - Average Rectified (Io):	1A
Voltage - Forward (Vf) (Max) @ If:	450mV @ 1A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	400µA @ 20V
Capacitance @ Vr, F:	--
Mounting Type:	Surface Mount
Package / Case:	DO-219AB
Supplier Device Package:	Sub SMA
Operating Temperature - Junction:	-55°C ~ 125°C

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Single-Phase Silicon Controlled Rectifier (SCR)

A single-phase silicon controlled rectifier (SCR) is a three-terminal semiconductor device designed to operate as a rectifier in an electrical circuit. It is an important device in the application of power electronics and is widely used in electronic devices and other equipment. SCRs are used to effectively control the flow of power within an electrical system, and are able to switch from a low impedance state to a high impedance state depending on the applied voltage. When in a low impedance state, current is allowed to flow in a single direction. When in a high impedance state, current is prevented from flowing.

SS12L RTG

The SS12L RTG (Rapid Thermal Gradient), is a single-phase SCR designed to be used in high-speed heating and cooling applications. Specifically, the device is designed to rapidly heat or cool a heated semiconductor, such as a diode, mosfet, transistor or any other semiconductor device. This device operates with relatively low voltages, which makes it suitable for operation in any power regime.The device is composed of a single-phase rectifier structure with a cathode-gate-anode configuration. The rectifier is composed of two copper conductors connected to the anode and cathode and a gate connected to the middle. A thyristor is connected between the gate and the cathode. The thyristor is triggered by a brief pulse applied to the gate terminal. This causes the thyristor to switch from a high impedance to a low impedance state, allowing current to flow.

SS12L RTG Working Principle

When a pulse is applied to SS12L RTG’s gate, the thyristor switches from the high impedance state to the low impedance state. This causes current to flow in a single direction and the rapid thermal gradient enables the device to rapidly heat or cool its target device. When the SS12L RTG is used to heat a semiconductor, the current flows through the device and is converted into thermal energy by the semiconductor. This thermal energy accelerates the heating of the semiconductor. Conversely, when the device is used to cool the semiconductor, the current flows through the device and is converted into thermal energy by the semiconductor. This thermal energy accelerates the cooling of the semiconductor. The SS12L RTG enables quick and efficient heating and cooling processes and can be used in a variety of applications such as power electronics, motor control, circuit protection and many other high speed applications.

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