SS14HR3G

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The SS14HR3G is a single diode rectifier, specifically designed for high-frequency, high-efficiency dc-dc conversion. It features a low forward voltage drop (typical 1.08V at 4A) and high efficiency, allowing for smaller design envelopes and improved performance. The device is rated for a maximum operating temperature of 150°C and a maximum forward current of 4A, suitable for a wide range of power management applications.

The SS14HR3G is constructed from a silicon material, making it compatible with both lead-free soldering and Pb-free reflow soldering processes. The device is fully isolated and comes in a variety of package types, including the versatile TSSOP14FL package. With its high-efficiency, low forward voltage drop, and wide operating temperature range, it is the preferred choice for a variety of high-frequency switching, inverting and charging applications.

The SS14HR3G is a rectifier diode with a peak repetitive reverse voltage rating of 800V that can manage a continuous reverse voltage of 400V. It offers a low dynamic resistance (0.0027Ω at 4A), resulting in a very low forward voltage drop. The device also has a large junction capacitance of 0.22pF, allowing for high-frequency operation and fast switching speeds. In addition, the diode has a low leakage current, which helps to maintain low power consumption.

The SS14HR3G is suitable for use in a wide range of high-frequency applications that require a low forward voltage drop and high efficiency. Such applications include high-frequency dc-dc converters, flyback converters, switchers, inverters, and battery chargers. The device is designed for use in radiation-hardened environment requirements and is often used in military and aeronautical applications.

The SS14HR3G is a diffused diode that is commonly used as a freewheeling diode due to its low forward voltage drop. This makes it well suited for use in solar and high-efficiency lighting applications. It can also be used in high-current applications as a protective device. In these applications, it can be used to protect against reverse voltage as well as electrostatic discharge.

The SS14HR3G working principle is based on the semiconductor PN junction. The semiconductor material is made up of two different personalities – the P-type for positive charges and the N-type for negative charges. The diode is forward biased when the positive terminal (anode) is at a higher potential than the negative terminal (cathode). This allows current to flow from the anode to the cathode, creating a voltage drop across the PN junction of the diode. In reverse situation, the PN junction of the diode is reverse biased, blocking current from passing through it, until the reverse voltage surpasses the rated breakdown voltage of the diode.

The SS14HR3G has been designed to improve efficiency in high-frequency applications and offer excellent protection against high-voltage environments. By ensuring low leakage, forward voltage drop, and dynamic resistance, this device perfectly suits applications with stringent power efficiency requirements. In addition, its wide temperature range and radiation-hardening characteristics make it suitable for applications operating in extreme environments.

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