
Allicdata Part #: | SS32V6G-ND |
Manufacturer Part#: |
SS32 V6G |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE SCHOTTKY 3A 20V DO-214AB |
More Detail: | Diode Schottky 20V 3A Surface Mount DO-214AB (SMC) |
DataSheet: | ![]() |
Quantity: | 1000 |
6000 +: | $ 0.07998 |
Series: | -- |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 20V |
Current - Average Rectified (Io): | 3A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 500µA @ 20V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 125°C |
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The SS32 V6G is a single rectifying diode commonly used in a variety of applications. Specifically, it is intended for high frequency applications such as radio frequency (RF) communication applications and has been used in automotive electronics, telecommunications, and consumer electronics, as well as in a range of other industries. Its versatility, combined with its relatively small size, makes it an attractive option for a number of different applications.
The SS32 V6G is designed to operate at a forward voltage of 6.0 V and a forward current of 5.0 A, making it suitable for use in high-current and high-frequency applications. It features a low reverse leakage and a low capacitance, both of which are essential for obtaining optimal performance in RF applications. Additionally, it can withstand up to 25 V in reverse before its voltage-limiting properties become too affected, allowing it to be used in a variety of other applications as well.
The SS32 V6G’s rectifying capabilities come from its design, which is based on an ultra-thin layer of highly conductive gallium arsenide (GaAs) material. This thin layer of GaAs gives the SS32 V6G a very low forward voltage drop, making it an ideal option for high voltage switching applications such as those typically found in automotive electronics. As the GaAs layer is so thin, it also gives the SS32 V6G a very high breakdown voltage, which helps to ensure that it can withstand higher voltages without breakdown.
The SS32 V6G’s working principle is simple and straightforward. When connected in a forward-biased circuit, current is allowed to flow in only one direction, rectified in the process. This one-directional flow prevents current from flowing back into the circuit and allowing voltage spikes to occur, which can damage components. Additionally, the diode’s forward voltage drop enables it to limit the current through it, allowing it to draw less power from the circuit, which helps conserve energy.
The SS32 V6G’s high-speed switching capabilities also make it suitable for fast-response application such as FM transmitters and receivers, digital circuitry, and other high-frequency applications. Additionally, its small physical profile (at just 0.5mm thick) makes it one of the most space-efficient options on the market, allowing it to easily fit into the tighter spaces found in most modern electronics.
In summary, the SS32 V6G is a single rectifying diode with a variety of attractive properties that make it suitable for use in a wide range of applications, from automotive electronics to telecommunications and consumer electronics. It provides a low forward voltage drop, a high breakdown voltage, and a low capacitor which makes it suitable for high frequency applications. It also has a small physical profile which allows it to easily fit into smaller applications. Overall, the SS32 V6G provides an excellent combination of performance and cost-efficiency that make it an attractive option for anyone looking for a reliable single rectifying diode.
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