SS34LW RVG Allicdata Electronics

SS34LW RVG Discrete Semiconductor Products

Allicdata Part #:

SS34LWRVGTR-ND

Manufacturer Part#:

SS34LW RVG

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE SCHOTTKY 40V 3A SOD123W
More Detail: Diode Schottky 40V 3A Surface Mount SOD123W
DataSheet: SS34LW RVG datasheetSS34LW RVG Datasheet/PDF
Quantity: 1000
3000 +: $ 0.06751
6000 +: $ 0.06376
15000 +: $ 0.05814
30000 +: $ 0.05439
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 200µA @ 40V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD123W
Operating Temperature - Junction: -55°C ~ 125°C
Description

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The SS34LW RVG is a type of component that is used in electronics and integrated circuits. It is a single rectifier diode and is designed to limit voltage and current in applications ranging from analog systems to RF and digital systems.

The SS34LW RVG is fabricated using a precision silicon epitaxial process and diffusion tubs to create a high performance, low voltage rectifier diode with reverse recovery characteristics. The diode is designed to reduce the circuit losses due to voltage and current fluctuations in various power supply applications.

The SS34LW RVG is a miniature form factor which makes it ideal for high density circuit designs. It is available in SOD-123, SOD-323 and other packages to fit different applications. The rectifier has excellent characteristics such as low leakage current, low forward voltage drop, and fast reverse recovery characteristics.

The primary application of the SS34LW RVG is in power supplies, where it is used to protect the voltage and current level of the power supply. It can also be used to improve the performance and power efficiency of digital circuits. In analog systems, the diode can be used to regulate the voltage levels and provide protection from overvoltage transients.

The working principle of the SS34LW RVG is based on the reverse saturation effect of its PN junction. When a forward bias is applied across the diode, charge carriers are injected into the depletion region, creating a voltage potential difference. When the applied voltage exceeds the barrier potential difference, the diode allows current to flow in the forward direction. When the forward bias is removed, the recombination of injected charges generates an equal and opposite polarity voltage, forcing the majority of carriers out of the depletion region, thereby limiting the current flow in the reverse direction.

Additionally, because of its low leakage current, fast switching time, and high surge current capability, the SS34LW RVG is well suited for high frequency rectification applications such as Zener diode replacements, load switches, and high efficiency RF detectors.

The SS34LW RVG is a versatile device that can be used in a wide array of electronic applications, such as power supplies, analog and digital circuits, and RF applications. With its high performance, low voltage, and fast reverse recovery characteristics, it is an ideal component for high density circuit designs.

The specific data is subject to PDF, and the above content is for reference

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