SS36LHRHG

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The SS36LHRHG is a medium power silicon rectifier diode developed to meet the high surge current requirements of many of today\'s power conversion applications.

Rectifier diodes are used to convert AC power to DC power and are used extensively in power conditioning and regulating circuits such as rectifier bridges, voltage regulators and charge controllers. Diodes are generally classified by their capability to conduct current. A regular diode may have a current conduction capability up to a couple of hundred milliamperes; the SS36LHRHG diode has a current conduction capability of up to 6A.

The SS36LHRHG diode offers excellent commutation characteristics across the rated temperature range, making it well suited to use in high frequency rectifier applications. Also, the SS36LHRHG has a breakdown voltage of 1600 volts, which makes it suitable for applications with high input voltages.

The SS36LHRHG diode has a maximum junction temperature of 125 degrees Celsius and is designed for operation in any environment without the need for heat sinks or other cooling devices. The diode is offered in a TO-220 package, which is suitable for automation in high volume applications.

The working principle of the SS36LHRHG diode is based on the PN junction. It is a nonlinear device whose conduction characteristics depend on the magnitude and polarity of the applied voltage. The conduction of current through the PN junction occurs when the applied voltage is greater than the PN junction\'s forward voltage drop.

In operation, when the anode of the diode is connected to a positive voltage supply, a thin depletion layer is formed adjacent to the PN junction. This depletion layer prevents conduction of current until the applied voltage reaches the threshold level. Then, current is set to flow from the anode to the cathode and through the diode. This process is known as the forward-biased conduction of the PN junction.

When a negative voltage is applied to the diode, the depletion layer becomes large and prevents conduction of current. This process is known as the reverse-biased conduction of the PN junction. Reverse-biased conduction occurs when the applied voltage is greater than the PN junction\'s breakdown voltage.

In summary, the SS36LHRHG is a silicon rectifier diode designed to meet the high surge current requirements of many of today\'s power conversion applications. It offers excellent commutation characteristics, a maximum breakdown voltage of 1600 volts, and a maximum junction temperature of 125 degrees Celsius. The diode is based on the PN junction which operates via the forward- and reverse-biased conduction of the PN junction.

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