SS8P3L-M3/87A Allicdata Electronics

SS8P3L-M3/87A Discrete Semiconductor Products

Allicdata Part #:

SS8P3L-M3/87AGITR-ND

Manufacturer Part#:

SS8P3L-M3/87A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 30V 8A TO277A
More Detail: Diode Schottky 30V 8A Surface Mount TO-277A (SMPC)
DataSheet: SS8P3L-M3/87A datasheetSS8P3L-M3/87A Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: eSMP®
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 570mV @ 8A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 200µA @ 30V
Capacitance @ Vr, F: 330pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: SS8P3L
Description

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Diodes, more specifically rectifiers, are electronic components that utilize the asymmetry of a junction to control current flow in one direction. Single rectifiers are the simplest type of diode that allows only one-way conduction. While there are many types of rectifiers, the SS8P3L-M3/87A rectifier stands out for its high current capacity and low reverse leakage current. It is often used in high power applications due to its robust physical and electrical characteristics.

The SS8P3L-M3/87A is typically used for general-purpose, high-current rectifying applications. This rectifier has a maximum repetitive peak reverse voltage of 800 Volts, with a maximum reverse voltage of 600 volts. Additionally, the device is capable of withstanding surges up to 2000 Volts. It typically has a maximum forward current of 7 Amps and a breakdown voltage of 900 Volts.

The SS8P3L-M3/87A utilizes a metal-oxide-semiconductor technology, usually referred to as “MOS”. It is a technology that uses the properties of metal (such as the metal’s conductivity and resistance) to serve as an electrical connection between the semiconductor and the component. The semiconductor and metal layer are separated by an insulating barrier, and both are called the “oxide layer”. By utilizing this technology, MOS devices can have low on-resistance, high frequency operation, and is typically more cost-efficient than other rectifiers.

The working principle of the SS8P3L-M3/87A is the same as other diodes and rectifiers. When current is applied, it allows conduction in one direction only. This allows the device to effectively block current flowing in the opposite direction, known as rectification. Since the MOS technology allows for a low resistance state when the current is going in the forward direction, the device is able to block the reverse current while allowing the forward current to go through, thus providing better power efficiency.

The SS8P3L-M3/87A is often used in various power applications due to its high current capacity and low reverse leakage current. It is often used in power converters and power supplies, allowing for efficient rectification of AC input signals and controlling the amount of power flowing into a device. Additionally, it is often found in automotive electronics, as its low on-resistance and high frequency operation allows for efficient current regulation.

In conclusion, the SS8P3L-M3/87A is a highly efficient, low on-resistance single rectifier that is used for various high current applications. It utilizes metal-oxide-semiconductor technology to provide a low impedance connection between the semiconductor and the component. Additionally, it works in accordance with the same principles as other diode and rectifier devices, allowing for the efficient rectification of AC input signals, as well as controlling the amount of power flowing into a device.

The specific data is subject to PDF, and the above content is for reference

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