SS8PH10-M3/86A Allicdata Electronics

SS8PH10-M3/86A Discrete Semiconductor Products

Allicdata Part #:

SS8PH10-M3/86AGITR-ND

Manufacturer Part#:

SS8PH10-M3/86A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 100V 8A TO277A
More Detail: Diode Schottky 100V 8A Surface Mount TO-277A (SMPC...
DataSheet: SS8PH10-M3/86A datasheetSS8PH10-M3/86A Datasheet/PDF
Quantity: 6000
Stock 6000Can Ship Immediately
Specifications
Series: eSMP®
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 8A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 2µA @ 100V
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: SS8PH10
Description

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Diodes - Rectifiers - Single - SS8PH10-M3/86A Application Field and Working Principle

The SS8PH10-M3/86A ultrafast rectifier is part of STMicroelectronics’ STripFET™ series of advanced electronic components. With a high voltage rating of 800V, an ultrafast recovery and low capacitances, this diode is suitable for a range of applications, such as DC-DC converters, automotive and general power supply circuits. As an ultrafast recovery rectifier, it has faster and more accurate response time than standard rectifiers and is capable of significantly reducing switching losses and electromagnetic interference.

It is a single diode with a maximum peak reverse voltage (PRV) of 800V, a maximum forward current of 8A and a maximum reverse current of 30mA. It has a high thermal cycling capability of up to 200 kg, allowing it to survive in demanding environments. The diode also has a soft recovery feature, allowing it to provide maximum noise reduction during switching and reduce turn-on losses. Its ultra-low leakage current and minimum capacitance characteristics help to reduce power consumption in power systems.

Working Principle

A diode is composed of two p-n junction materials that allow current to flow in one direction but not in another. The SS8PH10-M3/86A diode operates in the same way, with a reverse breakdown voltage of 800V and a forward current rating of 8A. When positive voltage is applied to the anode (p-type region) of the diode, the electric current automatically flows from the anode to cathode (n-type region) without any further external connection. This flow of current continues until the voltage across the diode is greater than or equal to the breakdown voltage of the diode.

When the reverse voltage rises higher than the reverse breakdown voltage, the diode exhibits a negative resistance behavior and becomes free conducting in the direction of the reverse voltage. This behavior is known as reverse breakdown and is used in many applications as an electrical switch. When the applied voltage is negative and exceeds the breakdown value, the diode is blocked and no current flows through it.

Application Fields

The SS8PH10-M3/86A diode is a high-performance, feature-rich ultrafast rectifier diode suitable for use in applications requiring fast response times, low leakage currents, and low capacitance. Its high voltage rating and soft recovery make it ideal for high frequency switching applications, such as DC-DC converters, automotive and general power supply circuits. It is also suitable for AC motor control circuits, UPS systems and other applications that require high power and speed.

The diode also offers improved surge current capability and voltage stability, making it suitable for AC circuit applications. Its fast recovery time helps reduce switching losses and reduce noise. In addition, its temperature cycling feature allows it to survive in harsh environments, making it ideal for industrial and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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