Allicdata Part #: | SST12LP07A-QXBETR-ND |
Manufacturer Part#: |
SST12LP07A-QXBE |
Price: | $ 0.00 |
Product Category: | RF/IF and RFID |
Manufacturer: | Microchip Technology |
Short Description: | IC RF PWR AMP 802.11B/G/N 12-QFN |
More Detail: | RF Amplifier IC 802.11b/g/n 2.4GHz ~ 2.5GHz 12-QFN... |
DataSheet: | SST12LP07A-QXBE Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Frequency: | 2.4GHz ~ 2.5GHz |
P1dB: | -- |
Gain: | 28dB |
Noise Figure: | -- |
RF Type: | 802.11b/g/n |
Voltage - Supply: | 3 V ~ 3.6 V |
Current - Supply: | 220mA |
Test Frequency: | 2.4GHz ~ 2.5GHz |
Package / Case: | 12-XFQFN Exposed Pad |
Supplier Device Package: | 12-QFN (2x2) |
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RF amplifiers, also known as radio frequency amplifiers, refer to electronic devices or circuits that amplify low-power radio frequency signals. As the name suggests, RF amplifiers take low-power signals from the antenna, amplify them, and then send them over longer distances. This means that the signal received at the receiving end has been improved in strength, allowing it to be processed more easily. One of the most common applications for RF amplifiers is in cellular networks, where they are used to boost signal strength and extend transmission range.
The SST12LP07A-QXBE is a high performance RF amplifier designed for the application of mobile communication networks. It is an internally matched, wideband, linear, GaN based power amplifier capable of operating from 450 MHz to 2600 MHz, while delivering up to 20dBm of output power in class-4 linear operation and up to 36dBm of saturated output power with superior power added efficiency.
The SST12LP07A-QXBE uses nonlinear predistortion to provide improved linearity performance and low-noise. As a result, this RF amplifier is capable of delivering high linearity, excellent adjacent channel power, ultra-low out of band emissions, as well as low sensitivity to temperature and supply voltage variation. This wide band amplifier utilizes advanced high-speed GaN on silicon-carbide technology making it suitable for power applications in the UHF and lower microwave frequencies.
The internal architecture of this amplifier consists of a two-stage amplifier with two PAs and two drivers. The first stage signal amplifier amplifies the input signal, while the second stage, or power amplifiers, boost the out of the first stage amplifier and prepares it for transmission. The two drivers form a negative feedback loop, reducing distortion levels and improving linearity performance. The two power amplifiers then amplify the signal output of the feedback loop and provide the final output to the antenna.
The SST12LP07A-QXBE features an integrated temperature sensor that can be used to measure the temperature of the amplifier and optimize performance. It also offers an innovative gain control feature that allows the output power to be dynamically adjusted, allowing the user to adjust the output to the desired level. This feature is especially useful in applications where the signal is fluctuating and the output needs to be adjusted accordingly.
Overall, the SST12LP07A-QXBE amplifier is an excellent choice for power applications in the UHF and lower microwave frequencies. Thanks to its excellent linearity performance, low-noise operation, improved power added efficiency and wideband performance, it is the ideal solution for any application where signal amplification is required. It is an efficient and reliable amplifier that is easy to integrate into any system, allowing the user to enjoy high-quality signal transmission.
The specific data is subject to PDF, and the above content is for reference
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