SST174-T1-E3 Allicdata Electronics
Allicdata Part #:

SST174-T1-E3-ND

Manufacturer Part#:

SST174-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: JFET N-CH 30V 20MA SOT-23
More Detail: JFET P-Channel 30V 350mW Surface Mount SOT-23
DataSheet: SST174-T1-E3 datasheetSST174-T1-E3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 0V
Resistance - RDS(On): 85 Ohms
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Description

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Introduction to SST174-T1-E3
The SST174-T1-E3 is a type of discrete semiconductor device commonly known as a Junction Field-Effect Transistor (JFET). The JFET is a three-terminal device with source and drain electrodes, along with a gate connected to the gate of the FET. This particular device is designed for switching and amplification applications, and is manufactured in a plastic encapsulated package for added protection.
Application Field
The SST174-T1-E3 is a versatile device, and can be used in various areas of electronics, from amplifying to switching. It can be used as an analog switch to control the flow of analog signals, or as a digital switch to control the flow of digital logic signals. It can also be used in linear amplifiers, to provide gain control and increased sensitivity. And of course, the JFET can be used in circuits that require amplification, such as amplifiers and mixers.
Working Principle
The working principle of the SST174-T1-E3 relies on the ability of the gate of the device to control the conductivity of the channel sandwiched between the source and drain electrodes. When a positive voltage is applied to the gate, the channel becomes more conductive, allowing more current to flow through the transistor, and thus providing increased gain. When a negative voltage is applied to the gate, the channel becomes less conductive, and the transistor will provide decreased gain. The SST174-T1-E3 can also be used in reverse-mode, where applying a positive voltage to the gate will cause the transistor to turn off instead of on.
Conclusion
The SST174-T1-E3 is a versatile discrete semiconductor device, with applications ranging from switching and amplification to linear amplification. It has the capability to control the flow of analog and digital signals, and to provide gain control and increased sensitivity for applications that require amplifying. The working principle of the device relies on the ability of the gate to control the conductivity of the channel between the source and drain electrodes. With its wide range of features and applications, the SST174-T1-E3 is an excellent choice for electronics projects and applications.

The specific data is subject to PDF, and the above content is for reference

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