
Allicdata Part #: | SST12LP19E-NR-ND |
Manufacturer Part#: |
SST12LP19E-NR |
Price: | $ 0.00 |
Product Category: | RF/IF and RFID |
Manufacturer: | Microchip Technology |
Short Description: | IC GAAS AMP 2.4GHZ 8XSON |
More Detail: | RF Amplifier IC 802.11b/g/n 2.4GHz 6-X2SON (1.5x1.... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Frequency: | 2.4GHz |
P1dB: | 26dBm |
Gain: | 25dB |
Noise Figure: | -- |
RF Type: | 802.11b/g/n |
Voltage - Supply: | 3.3V |
Current - Supply: | 195mA |
Test Frequency: | 2.4GHz |
Package / Case: | 6-XFDFN Exposed Pad |
Supplier Device Package: | 6-X2SON (1.5x1.5) |
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RF amplifiers are broadly used in communications, broadcast and various other industries. They are essential components in helping facilitate signal reception or transmission. The SST12LP19E-NR is a high-frequency amplifier primarily developed as a low-noise block amplifier (LNA). It is a small, low-profile amplifier designed to operate from DC to 3.5 GHz.
The SST12LP19E-NR offers superior performance for applications that require high gain and low noise figures (NF), typically ranging from 30–45 dB. It also offers minimal 1 dB harmonic distortion and is capable of achieving gain of over 40 dB at 3.5 GHz. A maximum power output of +19 dBm is possible, giving it excellent power output for its size and form factor.
The SST12LP19E-NR is ideally suited for use as a low-noise preamplifier in transmission systems, especially those in which high-frequency signals have to be amplified over a wideband. It can also be used in a variety of high-performance front-end applications, such as the receive chain of base station receivers and home RF systems. The LNA can also be used as a cascadable gain block in many communication applications, including wireless local area networks (WLANs).
The SST12LP19E-NR operates on a wide range of supply voltages, from 2.7 to 5.5 V. It is resistant to power supply disturbances and is very stable over temperature variation. It is also supplied in a range of packages, from the 4.4 mm × 4.4 mm × 0.8 mm plastic Quad Flat No-Leakage (QFN) package to the microscopic 0.3 mm × 0.3 mm chip-scale packaging.
The SST12LP19E-NR utilizes a high-efficiency InGaP HBT technology along with an advanced active biasing circuit. This allows it to achieve low current consumption. The low phase noise of this amplifier makes it well suited for applications such as GPS systems, receivers, and other sensitive electronic devices.
The topology of the SST12LP19E-NR is a simple direct coupled two-stage amplifier that is balanced and uses a single power supply. The first stage acts as a low-noise amplifier while the second stage is designed for increased gain and improved output power. An inductive feedback network is present in order to obtain low-noise performance and better dynamic range. This design allows for a wide range of gain and power output, making it well suited for a wide variety of applications.
In conclusion, the SST12LP19E-NR is an ideal choice for RF applications that require a compact, high-performance low-noise amplifier. It is a reliable and high-performance amplifier that offers excellent performance in applications that require high gain and low noise figures, as well as cascadable gain, output power, low current consumption, and low phase noise.
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