SST12LP17B-XX8E

RF Amplifiers are extremely important components in radio-frequency (RF) electronics, which are used in numerous applications from television receivers to satellite systems. The SST12LP17B-XX8E is an efficient, cost-effective RF amplifier module designed for use in a wide range of applications.

The SST12LP17B-XX8E is a medium-power amplifier unit which can be used for applications in the frequency range from 500 MHz to 1.75 GHz. It is powered by a single voltage from 5V to 28V and provides an output power of maximum 17dBm and excellent linearity. The module can be used for a variety of applications, ranging from wireless communication systems, RF identification, radar, monitoring and surveillance, to multiple antenna systems, to name a few.

The working principle of the SST12LP17B-XX8E is based on a three-stage transistor architecture: the power amplifier is driven by a low-noise input amplifier, which is in turn driven by an auxiliary amplifier. The signal received through the input amplifier is then amplified by the power amplifier, increasing its power level. This output power is then regulated by the power detector, which is used to adjust the bias control voltage of the auxiliary and power amplifiers, keeping the power output level constant.

The SST12LP17B-XX8E is a compact and cost-effective solution for applications requiring high linearity and power output. It provides excellent performance in both the linear and saturated regions, allowing for improved system spectral efficiency and increased overall coverage. Additionally, the module’s low power consumption and integrated bias controller make it attractive for embedded systems in which size and power consumption are of the essence.

The wide-band SST12LP17B-XX8E amplifier is an excellent RF solution for a variety of applications. It offers a cost-effective solution, simplifies design complexity, and provides excellent performance in both linear and saturated regions.