SST5461-T1-E3 Allicdata Electronics
Allicdata Part #:

SST5461-T1-E3-ND

Manufacturer Part#:

SST5461-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: JFET P-CH 55V 2MA SOT-23
More Detail: JFET P-Channel 40V 350mW Surface Mount SOT-23
DataSheet: SST5461-T1-E3 datasheetSST5461-T1-E3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Description

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Transistors are an electronic device that is used in many different circuit designs, including those used in radio frequency (RF), audio amplifier, power supplies, and power switching. The SST5461-T1-E3 is a type of Junction Field Effect Transistor (JFET) that is used in a variety of applications due to its low power dissipation characteristics, low input and output capacitance, and fast switching times.

A JFET is an unipolar semiconductor device that utilizes field effect for current control. This type of transistor consists of two PN junctions, one at the source and one at the drain, with a symmetrical gate in between. When applying an electric field, a depletion zone is created between the PN junction, which effectively blocks current in the channel and modifies the device\'s output current. This makes JFETs an excellent choice for low power devices, which require very low input and output capacitance.

The SST5461-T1-E3 is a N-channel JFET, which is mostly used in audio amplification and power switching applications. It has a dual PN junction in its structure, with the gate being connected to the substrate. The dual PN junction allows this type of JFET to be used in circuits that require a high input and output impedance. Additionally, it has an extremely low gate-source capacitance, which helps to maintain a high signal fidelity.

The working principle of the SST5461-T1-E3 is based on the junction field effect mechanism. When a gate voltage is applied to the device, a depletion zone is created in the channel between the PN junctions. This depletion zone blocks current from flowing from the source to the drain so that when a gate voltage is applied, it modifies the current flow from the source to the drain, which is known as the output current. The depletion zone formed by the applied voltage also serves to reduce the capacitance between the gate and the source, which helps to maintain a high signal fidelity.

The SST5461-T1-E3 is an ideal device for use in many different applications, such as audio amplification and power switching. Due to its low power dissipation characteristics and high input and output capacitance, it can be used in circuits that require high signal fidelity and low power consumption. Additionally, its fast switching time makes it an excellent choice for applications that require quick response times, such as automotive and motor control.

The specific data is subject to PDF, and the above content is for reference

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