SST5485-E3 Allicdata Electronics
Allicdata Part #:

SST5485-E3-ND

Manufacturer Part#:

SST5485-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: JFET P-CH 35V 4MA SOT-23
More Detail: JFET N-Channel 25V 350mW Surface Mount SOT-23
DataSheet: SST5485-E3 datasheetSST5485-E3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25V
Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Description

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SST5485-E3 is an insulated gate field-effect transistor (IGFET) belonging to the junction gate field-effect transistors (JFETs) family. It is a radial-leaded package device, with a N channel structure. This device is mostly used in high frequency application, thanks to its low gate-source capacitance and low output capacitance. It is also useful in linear applications because of its low noise and low dc offset. Furthermore, the SST5485-E3 is especially designed to be high-quality and highly reliable device, with features such as lower gate leakage current, higher pinch-off voltage, and higher breakdown voltage.

The SST5485-E3 is commonly used in analog signal processing applications. It is usually found in circuits such as switched-capacitor filters and many amplifier stages. This device can also be used in differential amplifier circuits, primarily due to its low noise performance. Other applications are tuned circuits, logarithmic amplifiers, and sample and hold circuits, which benefit from its DC properties.

The working principle of the SST5485-E3 is based on the phenomenon of the electrons being induced to move from a source towards a drain when a voltage is applied across the gate. When the voltage across the gate is increased, a cloud of electrons is formed close to the gate-channel junction (the junction gate). This phenomenon is known as the depletion region of the transistor and can be represented as an accumulation of electrons. The more electrons collected in the depletion region, the less current that can pass through the transistor. This is how the IGFFET functions.

The SST5485-E3 is a versatile device and can be used in a variety of applications. Its characteristics make it well-suited for high frequency applications, linear applications, and analog signal processing. The N channel structure also makes it an excellent device for low noise performance and high reliability. Its low gate-source capacitance and low output capacitance are also beneficial for applications such as switched-capacitor filters and other amplifier circuits. With its low noise and low DC offset, the SST5485-E3 is the optimal choice for any application that requires decent signal quality.

The specific data is subject to PDF, and the above content is for reference

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