SST5484-T1-E3 Allicdata Electronics
Allicdata Part #:

SST5484-T1-E3-ND

Manufacturer Part#:

SST5484-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: JFET P-CH 35V 1MA SOT-23
More Detail: JFET N-Channel 25V 350mW Surface Mount SOT-23
DataSheet: SST5484-T1-E3 datasheetSST5484-T1-E3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25V
Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Description

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The SST5484-T1-E3 transistor is a JFET (Junction Field Effect Transistor) that has become increasingly popular in a wide range of applications. This piece of technology was developed in order to provide high performance, cutting-edge capabilities in devices requiring medium to high power functionality. The SST5484-T1-E3 is used mainly in the industrial and commercial sectors, but has also found its way into consumer electronics, automotive applications, and more.

One of the biggest advantages of the SST5484-T1-E3 is its low power consumption. This makes it ideal for use in applications where energy efficiency is an absolute must. Moreover, its efficiency makes it a great choice for mobile and battery-powered applications, as it can help to reduce power consumption and extend battery life. Additionally, the device is fairly small, making it easy to include in cramped spaces.

Since JFETs are Voltage-Controlled Current Source devices, the operating principle behind the SST5484-T1-E3 is simple. It consists of a voltage source applied from either end of the device, referred to as the Drain (D) and the Source (S). This voltage creates a potential difference between the Drain and Source, causing the device to conduct a current which is distributed between the Drain and Source according to the same voltage. This creates an electric field along the length of the transistor. This electric field is referred to as the “Junction Field”, which is the basis of JFETs’ operation.

This technology is ideal not only for its low power consumption, but also for its high performance. The device is capable of providing high-gain switching and amplification, allowing it to be used in many of today’s most popular audio, video, and telecommunications applications. Its high-voltage handling capabilities also allow it to be combined with other components in order to create a wide range of applications. The device is also quite reliable, able to withstand harsh environments and extreme temperatures for long periods of time.

Additionally, the SST5484-T1-E3 is quite cost-effective. It is relatively cheap to produce and can be used in a wide range of applications, making it a great choice for companies looking to reduce production costs while still maintaining high quality standards.

Overall, the SST5484-T1-E3 is an impressive piece of technology that has been used in a wide range of applications. Its low power consumption, high performance, and cost-effectiveness make it a great choice for those looking for a high-performance transistor to power their devices.

The specific data is subject to PDF, and the above content is for reference

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