ST2310DHI Allicdata Electronics
Allicdata Part #:

ST2310DHI-ND

Manufacturer Part#:

ST2310DHI

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS NPN 600V 12A ISOWATT218FX
More Detail: Bipolar (BJT) Transistor NPN 600V 12A 55W Through...
DataSheet: ST2310DHI datasheetST2310DHI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 12A
Voltage - Collector Emitter Breakdown (Max): 600V
Vce Saturation (Max) @ Ib, Ic: 3V @ 1.75A, 7A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5.5 @ 7A, 5V
Power - Max: 55W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOWATT-218-3
Supplier Device Package: ISOWATT-218
Description

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Transistors are an integral part of many electronic systems and devices, as they are fundamental components for switching and amplification, and have many applications. Different types of transistors can be tailored to a wide range of tasks. One type of transistor is the single bipolar (BJT) transistor, which is the subject of this paper, specifically the ST2310DHI application field and working principle.

The ST2310DHI is a high voltage transistor that can operate at potentials of up to 1000V. The main applications for this transistor are for medium-voltage switching, current limitation, and high-voltage amplifiers. It can be used in motor drives, inverters, transformers, and energy storage systems, among other power control applications.

The working principle of the ST2310DHI is based on the two junctions of a bipolar transistor. It is composed of two P-type and N-type semiconductor layers, which are connected with a base terminal. When this P-N junction is reverse biased, electrons will be attracted to the positively-charged base terminal, allowing them to flow between the P-type and N-type layers, resulting in a current flow. This current flow can then be used to amplify signals or to switch circuits on and off.

The functioning of the ST2310DHI is further enhanced by its characteristic high voltage index. The transistor is able to maintain a stable operation at rated current and power dissipation values well above other transistors. This is due to its high collector-emitter breakdown voltage performances, as well as its high-current gain and high-current gain bandwidth product. In addition, its input impedance is very high, which makes it a great choice for high-frequency applications.

The ST2310DHI transistor can also be used for commutation devices that require reliable operation, as it is specifically designed for high frequency and high-temperature operations. This enables it to act as a commutation device with excellent reliability and output response time. Moreover, the ST2310DHI can be used for triggering inductive loads, such as stepping motors, generators, or transformers. Its ability to be easily triggered and maintain a stable operation makes it a popular choice for many applications.

Overall, the ST2310DHI is an ideal choice for many medium- and high-voltage applications due to its excellent current gain, high voltage index, and reliable operation. It is specifically designed to meet the needs of power control applications that require high voltage, high-current performance and precision operation. The single bipolar (BJT) transistor makes it a great choice for many users who require a reliable and efficient power control.

The specific data is subject to PDF, and the above content is for reference

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