STBV42G Allicdata Electronics
Allicdata Part #:

497-8888-ND

Manufacturer Part#:

STBV42G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS NPN 400V 1A TO-92
More Detail: Bipolar (BJT) Transistor NPN 400V 1A 1W Through H...
DataSheet: STBV42G datasheetSTBV42G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 750mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 400mA, 5V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: STBV42
Description

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Bipolar junction transistors (BJTs) are primarily utilized as an amplifying component. They are divided into two categories, i.e. NPN and PNP, depending on the construction of the base and emitter. One of the subcategories of Bipolar Junction transistors is Single transistors, which includes several transistor models. STBV42G transistors belong to the Single category of transistors.

Hitachi\'s STBV42G Single Transistor is a high-speed, low-frequency, low-power BJT designed for applications such as amplifying or switching. It features a planar structure to make it suitable for multi-chip integration, and can operate at power levels between 5V and 25V. It is also equipped with a much higher hFE value than the previous generation of transistors, making it suitable for various digital applications.

The STBV42G has a total of three terminals – the collector, the base and the emitter. The collector is the power input of the transistor and also establishes an electrical connection to the device. The BASE is the gate which controls the current flow between the Collector and the Emitter. It is often used to switch the transistor "on" or "off". The emitter serves as a power output which connects to the ground of the circuit, and serves as the current return path.

The principal of working of the STBV42G is based upon the mechanism known as the beta-current gain. This involves the amount of current flowing through the transistor when a voltage is applied to the Base and a particular amount of current flows through the collector. The current gain is determined by the ratio of the collector current to the base current. In other words, if the current through the collector is 2 mA, and the current to the base is 1 mA, then the current gain of this STBV42G transistor would be 2. The voltage from the collector will always be larger than that from the base, thus allowing the current to switch between both terminals.

Due to its high hFE values, and low cost, the STBV42G Single Transistor provides an ideal choice for digital applications such as amplifying digital signals and for general signal switching. It can be used for various applications in the areas of communication, control, audio processing and sensing. It is also a great choice for mobile applications such as laptop, desktop, and mobile phones.

The STBV42G Single Transistor is an ideal choice for a variety of digital applications, and its planar structure allows it to be easily integrated into a multi-chip package. It provides a high hFE value, low power levels and a low-frequency operation, making it a preferred choice for many applications. Due to its small size and low cost, it can be used in even the most price-sensitive markets.

The specific data is subject to PDF, and the above content is for reference

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