STBV45G Allicdata Electronics
Allicdata Part #:

STBV45G-ND

Manufacturer Part#:

STBV45G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS NPN 400V 0.75A TO-92
More Detail: Bipolar (BJT) Transistor NPN 400V 750mA 950mW Thr...
DataSheet: STBV45G datasheetSTBV45G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 750mA
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 135mA, 400mA
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 400mA, 5V
Power - Max: 950mW
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: STBV45
Description

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The STBV45G Transistors Bipolar (BJT) Single is an integrated device used for applications such as amplification, switching, and microelectronics. This transistor is typically used in voltage control circuits, as well as push-pull and low noise circuits. Its small size and ease of use makes it an attractive option for many electronics applications. In this article, we will discuss the application field and working principle of the STBV45G Transistor.

The STBV45G transistor is a NPN-type transistor with a maximum voltage rating of 40 V, a maximum current rating of 500 mA, and a power dissipation of 0.5 W. Because of its low voltage and power dissipation, it is suitable for use in low-power applications. This makes the STBV45G a popular choice for powering small devices such as timers, sensors, and relays.

The STBV45G transistor is widely used in switching circuits. It is commonly used in applications such as H bridge drivers and pulse width modulation circuits. It can also be used for voltage-controlled logic circuits, motor control circuits, and electromechanical switches. It is also used in amplifiers, oscillators, and frequency multipliers.

The working principle of the STBV45G transistor is based on the “transistor effect”, which is a phenomenon where a small amount of current can control a much larger amount of current. This effect is achieved by the two electrodes, or base and emitter, which allow current to flow through the base when the voltage applied to it is higher than the emitter voltage. The current that flows through the base then flows through the collector, which is connected to the output. Therefore, the amount of current that flows through the collector can be controlled by the voltage applied to the base.

In addition to its basic function, the STBV45G can also be used as a current amplifier. This is done by connecting the base to a voltage source, and then connecting the collector to a load. When a small input current is applied to the base, a much larger output current will flow through the collector. This enables the transistor to act as an amplifier, and is useful for increasing the voltage or current level of a signal.

The STBV45G Transistor Bipolar (BJT) Single is a versatile and popular choice for many electronics applications. It is used in voltage control circuits, amplifiers, switching circuits, and electromechanical switches. Its small size and low power dissipation make it a good option for powering small devices, and its “transistor effect” makes it an effective and efficient amplifier. With its wide range of uses and easy-to-use design, the STBV45G is an excellent choice for many electronic applications.

The specific data is subject to PDF, and the above content is for reference

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