STBV45G-AP Allicdata Electronics
Allicdata Part #:

497-12549-3-ND

Manufacturer Part#:

STBV45G-AP

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS NPN 400V 0.75A TO-92AP
More Detail: Bipolar (BJT) Transistor NPN 400V 750mA 950mW Thr...
DataSheet: STBV45G-AP datasheetSTBV45G-AP Datasheet/PDF
Quantity: 4000
2000 +: $ 0.11894
Stock 4000Can Ship Immediately
$ 0.13
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 750mA
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 135mA, 400mA
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 400mA, 5V
Power - Max: 950mW
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92AP
Base Part Number: STBV45
Description

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STBV45G-AP Application Field and Working Principle

STBV45G-AP is a high-power bipolar transistor that belongs to the Transistors - Bipolar (BJT) - Single category. It is a NPN type transistor with a current gain of 50 hFE and a power dissipation rate of 2.5 Watts. STBV45G-AP has an operating junction temperature range of -25°C to +150°C. It is encapsulated with a TO-220-3 package.

STBV45G-AP has a wide range of applications in switching, general amplification and low-power signal processing applications. Most commonly, it is used as a power switch in applications like motor control and power supply management circuits. STBV45G-AP is also used in high-power audio amplifiers. Its high current gain and superior switching performance makes it a valuable device for the mentioned applications.

STBV45G-AP Working Principle

STBV45G-AP works according to the principle of a bipolar junction transistor (BJT). It exhibits properties of both a P-type and an N-type semiconductor material. The base of the transistor is the region where the P-type and N-type materials meet, and the current flows from the collector to the emitter. When the base of the transistor is supplied with a current, it in turn allows the current to flow from the collector to the emitter. The amount of current that flows through the circuit is determined by the collector-emitter voltage, which is set by the base current.

The current gain of STBV45G-AP is determined by the ratio of the collector current to the base current. The following equation is used to calculate the current gain of STBV45G-AP:

hFE = (Collector Current)/(Base Current)

The maximum current gain of STBV45G-AP is 50 hFE. This makes it a suitable transistor for high-power applications like motor control and audio amplification. It also provides superior switching performance, which ensures its efficiency in these applications.

STBV45G-AP is a high-power transistor and therefore should be used with appropriate safety measures. Its maximum operating junction temperature should not exceed 150°C, and due caution should be taken to ensure that its dissipation rate does not exceed its rated limit. This ensures maximum efficiency of the device and prevents damage due to overheating.

In conclusion, STBV45G-AP is a highly efficient and versatile transistor with a wide range of applications in motor control, power supply management, and high-power audio amplifiers. Its high current gain, superior switching performance, and maximum dissipation rate make it the perfect choice for these applications.

The specific data is subject to PDF, and the above content is for reference

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