SZ1SMA5935BT3G Allicdata Electronics

SZ1SMA5935BT3G Discrete Semiconductor Products

Allicdata Part #:

SZ1SMA5935BT3GOSTR-ND

Manufacturer Part#:

SZ1SMA5935BT3G

Price: $ 0.15
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ZENER 27V 1.5W SMA
More Detail: Zener Diode 27V 1.5W ±5% Surface Mount SMA
DataSheet: SZ1SMA5935BT3G datasheetSZ1SMA5935BT3G Datasheet/PDF
Quantity: 5000
1 +: $ 0.15000
10 +: $ 0.14550
100 +: $ 0.14250
1000 +: $ 0.13950
10000 +: $ 0.13500
Stock 5000Can Ship Immediately
$ 0.15
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 27V
Tolerance: ±5%
Power - Max: 1.5W
Impedance (Max) (Zzt): 23 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 20.6V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Description

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Diodes - Zener - Single devices such as SZ1SMA5935BT3G are widely used for a variety of purposes. These particular devices are deployed primarily in switching regulator circuits, as well as a variety of protection circuits and other voltage control applications. The ability of these devices to regulate voltage make them an ideal choice for many applications.

A SZ1SMA5935BT3G is a single, unidirectional Zener diode. Zener diodes are incredibly useful when used to protect circuitry from electrical overloading. It operates in forward bias like a regular diode, but is designed to operate in reverse bias with a much higher breakdown voltage. Once the voltage reaches the breakdown voltage, the diode goes into “zener breakdown” and starts to conduct current.

A SZ1SMA5935BT3G is a very common type of Zener diode. It can be used to protect circuits from high-voltage overloading. Its main feature is the ability to bypass voltages up to 35 volts, allowing it to easily protect a variety of circuits from voltage spikes. The Zener diode also exhibits a low dynamic impedance, allowing it to easily recover from a voltage overload.

The SZ1SMA5935BT3G is comprised of two layers of P-type semiconductor material and an N-type semiconductor layer between them. The N-type semiconductor layer is made thinner than usual, which makes the device far more sensitive to less voltage. When the voltage across the device reaches the avalanche voltage, the electrons in the N-type semiconductor layer can “avalanche” into the P-type layer and create a conduction path.

In the forward biased condition, the SZ1SMA5935BT3G acts as a regular diode, allowing current only to flow in the forward direction. In the reverse biased condition, the device can regulate voltage if the voltage across it reaches the breakdown voltage. In this condition, the device will conduct current until the voltage drops below the breakdown voltage once again.

This makes the SZ1SMA5935BT3G an ideal device for use in switching regulator circuits, protection circuits and other applications where the ability to protect against voltage overloads is important. The device is also useful for voltage regulation, allowing circuits to be powered without fear of overloading.

The SZ1SMA5935BT3G is a single, unidirectional Zener diode, and it is widely used for a variety of purposes. Its ability to regulate and protect against over-voltage makes this device a great choice for many applications. This device is highly efficient and capable of protecting and regulating a range of circuits against electrical overloads.

The specific data is subject to PDF, and the above content is for reference

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