SZESD8351MUT5G

TVS - diodes, or Transient Voltage Suppressor diodes, are semiconductor devices commonly used to protect electrical circuits from potential damage by discharging or diverting current away from sensitive electronic components such as integrated circuits and discrete components. The SZESD8351MUT5G is a TVS diode designed for general-purpose application and offers superior and reliable ESD (electrostatic discharge) protection. This device is available in the both SMT and through-hole versions.

The SZESD8351MUT5G is designed to provide a high level of protection against overvoltage and can be used in a wide range of applications including automotive, consumer electronics, and industrial audio/video systems. It is capable of handling up to 3500V peak pulse power and is able to discharge up to 10kA pulse current. The SZESD8351MUT5G features very low reverse leakage current, fast response times, and low capacitance, making it a suitable choice for applications requiring fast response time and low capacitance.

The working principle of the SZESD8351MUT5G is quite simple. It is designed with two Schottky diodes with opposite polarities that act as the primary movers. The Schottky diode structure acts as a low impedance current path for the transient pulses caused by static discharges or high switching frequencies. When a sudden voltage peak occurs on a line, it causes one of the diodes to turn on and the other to turn off, resulting in a sudden change in flow of current. This current flow is then redirected away from the sensitive components, thereby protecting them from damage. In addition, the SZESD8351MUT5G features an integrated bypass circuit which bypasses the current around the line when no transient is detected.

The SZESD8351MUT5G is a reliable and robust device that provides superior protection against overvoltage conditions. It is available in both SMT and through-hole versions, making it suitable for a wide range of application scenarios. Its fast response times, low capacitance, and low reverse leakage current makes it an ideal choice for applications that need fast response time and low capacitance. The device is also designed to handle up to 3500V peak pulse power and is capable of discharging up to 10kA pulse current. All these characteristics make the SZESD8351MUT5G an ideal choice for protecting circuits from potential damage caused by static discharges or high switching frequencies.