
SZESD9R3.3ST5G Circuit Protection |
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Allicdata Part #: | SZESD9R3.3ST5GOSTR-ND |
Manufacturer Part#: |
SZESD9R3.3ST5G |
Price: | $ 0.14 |
Product Category: | Circuit Protection |
Manufacturer: | ON Semiconductor |
Short Description: | TVS DIODE 3.3V 7.8V SOD923 |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
8000 +: | $ 0.12661 |
16000 +: | $ 0.11788 |
24000 +: | $ 0.11642 |
Voltage - Clamping (Max) @ Ipp: | 7.8V |
Supplier Device Package: | SOD-923 |
Package / Case: | SOD-923 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 125°C (TJ) |
Capacitance @ Frequency: | 0.5pF @ 1MHz |
Applications: | Automotive |
Power Line Protection: | No |
Power - Peak Pulse: | -- |
Current - Peak Pulse (10/1000µs): | 1A (8/20µs) |
Series: | Automotive, AEC-Q101 |
Voltage - Breakdown (Min): | 4.8V |
Voltage - Reverse Standoff (Typ): | 3.3V (Max) |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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Transient Voltage Suppression (TVS) diodes have been used in the semiconductor industry for many years, and the SZESD9R3.3ST5G is one of the latest developments in this field. The SZESD9R3.3ST5G is a unidirectional transient voltage suppressor diode designed for surface mount applications with an operating voltage range of 6.5 V to 190 V and a maximum peak pulse current of 9.2 A. This device is designed to protect electronic components from transient voltage spikes caused by events such as electrostatic discharge or lightning strikes.
The SZESD9R3.3ST5G diode has a wide variety of applications, including protection for automotive circuits, as well as portable electronic devices such as cell phones and other portable devices. It can also be used in industrial, medical, and consumer electronics applications. The device is typically used to provide protection from transient voltages that exceed the normal operating voltage of the device.
The working principle of the SZESD9R3.3ST5G diode is based on the phenomenon of avalanche breakdown. When a voltage is applied to the device, the electric field in the junction between the P and N type materials is increased until it reaches a critical value, at which point the avalanche breakdown occurs. This breakdown process is characterized by a rapid release of charge carriers, resulting in a very fast response. The device can thereby protect the attached electronic components from transient voltages.
The SZESD9R3.3ST5G diode is also capable of handling high power surges without affecting normal operation. It is designed with glass passivated junction technology in order to enhance reliability and ensure the device’s long-term stability. The device also features low reverse leakage current and low clamping voltage, making it ideal for use in high voltage systems. Additionally, the device’s efficient design helps to reduce power dissipation, making it energy efficient.
In summary, the SZESD9R3.3ST5G diode is a highly reliable and efficient device for providing transient surge protection in a variety of applications. Its wide range of operating voltages and its ability to handle high power surges make it an ideal choice for automotive, industrial, medical, and consumer electronics applications. Additionally, its low reverse leakage current and low clamping voltage ensure long-term stability and reliability. The SZESD9R3.3ST5G is a valuable tool for protecting electronic systems from transient voltage spikes.
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