Allicdata Part #: | SZNUP2301MW6T1GOSTR-ND |
Manufacturer Part#: |
SZNUP2301MW6T1G |
Price: | $ 0.13 |
Product Category: | Circuit Protection |
Manufacturer: | ON Semiconductor |
Short Description: | TVS DIODE SC88 |
More Detail: | N/A |
DataSheet: | SZNUP2301MW6T1G Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.11463 |
6000 +: | $ 0.10724 |
15000 +: | $ 0.09984 |
30000 +: | $ 0.09861 |
Current - Peak Pulse (10/1000µs): | -- |
Base Part Number: | NUP2301 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Capacitance @ Frequency: | 1.6pF @ 1MHz |
Applications: | Automotive |
Power Line Protection: | No |
Power - Peak Pulse: | -- |
Series: | Automotive, AEC-Q101 |
Voltage - Clamping (Max) @ Ipp: | -- |
Voltage - Breakdown (Min): | 70V |
Voltage - Reverse Standoff (Typ): | -- |
Unidirectional Channels: | 2 |
Type: | Steering (Rail to Rail) |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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TVS - Diodes: SZNUP2301MW6T1G Application Field and Working Principle
TVS (Transient Voltage Suppression) diodes are semiconductor devices used to protect electronic circuits against sudden and hazardous voltage spikes. They are extensively used in various applications, where high-voltage transients may damage delicate electronic components. One of the prominent examples are SZNUP2301MW6T1G silicon avalanche diodes. This article presents a discussion on the application field and working principle of SZNUP2301MW6T1G TVS diodes.
Application Field
The SZNUP2301MW6T1GTVS diodes are mainly used in automotive and industrial devices. Their fast response time makes them suitable to provide protection to large industrial equipment, such as motors, pumps, and generators. In particular, these TVS diodes have an unidirectional protection feature; this allows them to seamlessly protect power electronics from both transient and ESD (electrostatic discharge) threats. Further, these TVS diodes can also be used in price-sensitive applications, such as lighting, electrosurgical equipment, AC/DC power supplies, and laptops/desktops.
Working Principle
The working principle of SZNUP2301MW6T1G TVS diodes relies on the Avalanche Breakdown Effect. This effect occurs when the applied reverse bias voltage exceeds a certain level, known as the breakdown voltage. As the reverse bias voltage increases, the electric field within the depletion zone becomes stronger, which makes the diode electrons to travel faster and with higher energy.
This generates an increase in avalanche current, which can cause permanent damages to the diode. To prevent this, the SZNUP2301MW6T1G TVS diode comes with a fast-switching thyristor in series with it. This special thyristor triggers immediately when the reverse voltage surpasses the breakdown voltage. This quick triggering quickly clamps the overvoltages, preventing damages.
Advantages of SZNUP2301MW6T1G TVS Diode
The SZNUP2301MW6T1G TVS diodes offer several advantages over traditional zener diodes. Firstly, they are much faster than traditional zener diodes due to the presence of a thyristor. This improves the response time of the circuit and helps to absorb high-voltage transients. Secondly, these TVS diodes have a higher level of control over overvoltage at a circuit level, which results in improved protection from overvoltage. Thirdly, SZNUP2301MW6T1G TVS diodes come with a wide operating temperature range, allowing them to be used in a variety of temperature conditions.
Conclusion
In conclusion, SZNUP2301MW6T1G TVS diodes are semiconductor devices with an unidirectional protection feature. They are used in various applications, such as automotive, industrial, lighting, and electrosurgical equipment. The working principle of these diodes relies on the avalanche breakdown effect, and they are faster and offer better protection from transients as compared to traditional zener diodes.
The specific data is subject to PDF, and the above content is for reference
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