SZNUP4304MR6T1G Circuit Protection

Current - Peak Pulse (10/1000µs):	--
Base Part Number:	NUP4304
Supplier Device Package:	6-TSOP
Package / Case:	SC-74, SOT-457
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Capacitance @ Frequency:	1.6pF @ 1MHz
Applications:	Automotive
Power Line Protection:	No
Power - Peak Pulse:	--
Series:	Automotive, AEC-Q101
Voltage - Clamping (Max) @ Ipp:	--
Voltage - Breakdown (Min):	70V
Voltage - Reverse Standoff (Typ):	--
Unidirectional Channels:	4
Type:	Steering (Rail to Rail)
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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Transient Voltage Suppressor (TVS) Diodes, such as the SZNUP4304MR6T1G, are essential components for the protection of electronic devices and circuits against electrostatic discharge (ESD). They are designed to clamp and limit transient overvoltages in a wide variety of applications. To understand the function of the SZNUP4304MR6T1G and to effectively incorporate it into a circuit, it is important to understand its application field and working principle.When incorporated in a circuit, the TVS diode is connected in parallel with the device or circuit that requires protection. A primary function of any transient voltage suppressor is to respond to and safely clamps overvoltage events by providing a low impedance path to ground. In order for the TVS diode to maintain its unparalleled protection levels, the TVS diode must provide a very high clamping voltage at low incremental voltages of the transient.The SZNUP4304MR6T1G TVS diode is optimized for use in moving loop (ML) and junction protection circuits, and can be used in the protection of a variety of electronic devices and circuits. The device is designed in such a way that it will clamp and limit any overvoltage events in the -5V to + 5V spectral range. It is capable of dissipating an ESD pulse in the range of ± 8kV (HRM), ± 15kV (MM) and ± 30kV (DM). To ensure a long service life, the SZNUP4304MR6T1G has an operating temperature range of -55°C to + 125°C. In order to understand the working principle of the SZNUP4304MR6T1G, it is important to understand the underlying principle of ESD. During an ESD event, an otherwise high-energy transient injects a very high voltage into the protected circuit, which causes the TVS diode to enter its breakdown mode.Once the voltage reaches beyond the device’s reverse breakdown voltage level, the diode enters its command-switching state. In this state, the channel exhibits a very low impedance, which limits the rise in voltage to a safe level. When the energy has been discharged, the diode returns to its off state, allowing normal operation to resume. The SZNUP4304MR6T1G is also designed with advanced integration of capacitive and inductive components. Furthermore, it meets IEC 61000-4-2 ESD/tribo-electric contact standards. Finally, it has low operating and standby power dissipation and is very compatible with compact and space saving designs. The SZNUP4304MR6T1G is ideal for applications ranging from ITE (Information Technology Equipment) to consumer applications. It is suitable for applications like cell phones, portable media players, and other applications where space is at a premium. In addition, its low leakage current operation ensures that the device will not consume excessive power and will maintain the device’s battery life. In conclusion, the SZNUP4304MR6T1G TVS diode is designed to protect sensitive electronics and circuits against the harmful effect of overvoltage events. By understanding its application field and working principle, it is possible to effectively incorporate the device into a variety of circuits.

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