TC8220K6-G Discrete Semiconductor Products |
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Allicdata Part #: | TC8220K6-GTR-ND |
Manufacturer Part#: |
TC8220K6-G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET 2N/2P-CH 200V 12VDFN |
More Detail: | Mosfet Array 2 N and 2 P-Channel 200V Surface Mo... |
DataSheet: | TC8220K6-G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N and 2 P-Channel |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | 6 Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id: | 2.4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 56pF @ 25V |
Power - Max: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 12-VFDFN Exposed Pad |
Supplier Device Package: | 12-DFN (4x4) |
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The TC8220K6-G is a high-power product from the TC8220K6 family of low profile Low Insertion Loss (LIL) arrays targeted for Type-C applications. These arrays are designed for use in automotive, computer, and industrial control applications, and are suitable for voltage and current conversion applications. The TC8220K6-G is a high-power product with a 6-pin form factor. It has proven reliability and performance which allow it to be used in a wide variety of Type-C applications.
The TC8220K6-G array is suitable for a variety of applications because of its high power rating, low noise operation, and its low insertion loss. It is especially useful in Type-C applications because it can support multiple power levels, as well as a wide range of voltage and current ratings. This makes the TC8220K6-G suitable for conversion applications between different battery technologies or between different voltage or current rating levels. Furthermore, the TC8220K6-G has a good ESD protection rating and it is compliant with the latest revisions of the USB Type-C standard.
The operating principle of the TC8220K6-G is based on the bipolar junction transistor (BJT) arrays. BJTs use positive and negative charge carriers which are created through the combination of N and P type semiconductor materials. This combination allows current to flow in one direction, while blocking it in the other. The TC8220K6-G is equipped with 4 BJT pairs, and each pair has two N-type and two P-type transistors. With this configuration, the current can be controlled in both directions by the individual BJT pairs.
In addition to the BJT array, the TC8220K6-G features an Out-Of-Circuit Performance (OOCP) circuit. This circuit consists of a comparator, a reference voltage source, and a logic circuit. The comparator compares the voltage at the input of the OOCP circuit with the reference voltage source, and the logic circuit takes the comparator output and determines the necessary action. This allows the TC8220K6-G to control the output voltage and current in accordance with the user-specified requirements.
In summary, the TC8220K6-G is a high-power Low Insertion Loss array that is suitable for Type-C applications. It is equipped with 4 BJT pairs and an OOCP circuit, and it can support multiple power levels and a variety of voltage and current ratings. This makes it a great choice for voltage and current conversion applications between different battery technologies or between different voltage or current ratings. Furthermore, it has a good ESD protection rating and it complies with the latest revisions of the USB Type-C standard.
The specific data is subject to PDF, and the above content is for reference
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