TCFGA0J226M8R Capacitors |
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Allicdata Part #: | 511-1477-2-ND |
Manufacturer Part#: |
TCFGA0J226M8R |
Price: | $ 0.00 |
Product Category: | Capacitors |
Manufacturer: | ROHM Semiconductor |
Short Description: | CAP TANT 22UF 6.3V 20% 1206 |
More Detail: | 22µF Molded Tantalum Capacitors 6.3V 1206 (3216 Me... |
DataSheet: | TCFGA0J226M8R Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Operating Temperature: | -55°C ~ 125°C |
Failure Rate: | -- |
Features: | Fail Safe with Built-in Fuse |
Manufacturer Size Code: | A |
Lead Spacing: | -- |
Height - Seated (Max): | 0.071" (1.80mm) |
Size / Dimension: | 0.126" L x 0.063" W (3.20mm x 1.60mm) |
Package / Case: | 1206 (3216 Metric) |
Mounting Type: | Surface Mount |
Lifetime @ Temp.: | -- |
Series: | TCFG |
ESR (Equivalent Series Resistance): | -- |
Type: | Molded |
Voltage - Rated: | 6.3V |
Tolerance: | ±20% |
Capacitance: | 22µF |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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Tantalum capacitors, more specifically TCFGA0J226M8R, are a type of electrolytic capacitor that utilizes tantalum metal for its positive electrode and is filled with an electrolyte to act as its negative electrode. They are widely used in a multitude of applications due to their advantages such as small size, high energy density, low leakage current, and long shelf life.
The TCFGA0J226M8R\'s small size makes it ideal for space-constrained applications, as it can be much smaller than aluminum or other electrolytic capacitors. Their higher energy density also allows them to be used in applications where other capacitors may not be able to provide enough power. This is especially useful in applications where high levels of power are needed but space is limited.
The low leakage current and long shelf life of TCFGA0J226M8R capacitors make them ideal for use in applications that require long-term storage or operation under harsh environmental conditions. Leakage current is especially important in applications where it is necessary to maintain a certain level of electrical efficiency, which can be compromised by high leakage currents.
The working principle of TCFGA0J226M8R capacitors is based on the principle of electrostatic induction. When a potential difference is applied across the two electrodes of an electrolytic capacitor, its positive electrode, or anode, attracts a layer of electrons on the electrolyte, forming an electric double layer. This process is known as electrostatic induction and is responsible for the capacitors ability to store energy. When the potential difference is removed, the charge stored in the electric double layer of the electrolyte is released, allowing the capacitor to discharge.
The TCFGA0J226M8R has a variety of uses in a wide range of applications, and its low leakage current, small size, and high energy density make it a popular choice for many different products. It is commonly used in consumer electronics, automotive, medical, and military applications. In addition, it can also be used to provide surge protection and filtering in power management circuits, and as a capacitor for line decoupling and interference suppression.
In summary, TCFGA0J226M8R capacitors offer a combination of benefits that make them ideally suited for a multitude of applications. They are small in size, highly energy-dense, and have a long shelf life and low leakage current. Additionally, their working principle is based on the principle of electrostatic induction, which makes them a powerful and convenient choice for many different products.
The specific data is subject to PDF, and the above content is for reference
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TCFGB0J226M8R | ROHM Semicon... | 0.17 $ | 1000 | CAP TANT 22UF 6.3V 20% 14... |
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TCFGB0J476M8R | ROHM Semicon... | 0.19 $ | 1000 | CAP TANT 47UF 6.3V 20% 14... |
TCFGB1C336M8R | ROHM Semicon... | 0.19 $ | 1000 | CAP TANT 33UF 16V 20% 141... |
TCFGB1A476M8R | ROHM Semicon... | 0.21 $ | 1000 | CAP TANT 47UF 10V 20% 141... |
TCFGB0G227M8R | ROHM Semicon... | 0.19 $ | 1000 | CAP TANT 220UF 4V 20% 141... |
TCFGB0J107M8R | ROHM Semicon... | 0.18 $ | 1000 | CAP TANT 100UF 6.3V 20% 1... |
TCFGB0J336M8R | ROHM Semicon... | 0.18 $ | 1000 | CAP TANT 33UF 6.3V 20% 14... |
TCFGB1C156M8R | ROHM Semicon... | 0.18 $ | 1000 | CAP TANT 15UF 16V 20% 141... |
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TCFGB1A106M8R | ROHM Semicon... | -- | 1000 | CAP TANT 10UF 10V 20% 141... |
TCFGB0G107M8R | ROHM Semicon... | 0.16 $ | 1000 | CAP TANT 100UF 4V 20% 141... |
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TCFGA0G476M8R | ROHM Semicon... | 0.0 $ | 1000 | CAP TANT 47UF 4V 20% 1206... |
TCFGA0J226M8R | ROHM Semicon... | 0.0 $ | 1000 | CAP TANT 22UF 6.3V 20% 12... |
TCFGA0J336M8R | ROHM Semicon... | 0.0 $ | 1000 | CAP TANT 33UF 6.3V 20% 12... |
TCFGA1A106M8R | ROHM Semicon... | 0.0 $ | 1000 | CAP TANT 10UF 10V 20% 120... |
TCFGA1A156M8R | ROHM Semicon... | 0.0 $ | 1000 | CAP TANT 15UF 10V 20% 120... |
TCFGA1A226M8R | ROHM Semicon... | 0.0 $ | 1000 | CAP TANT 22UF 10V 20% 120... |
TCFGA1C105M8R | ROHM Semicon... | 0.0 $ | 1000 | CAP TANT 1UF 16V 20% 1206... |
TCFGA1C106M8R | ROHM Semicon... | 0.0 $ | 1000 | CAP TANT 10UF 16V 20% 120... |
TCFGA1C335M8R | ROHM Semicon... | 0.0 $ | 1000 | CAP TANT 3.3UF 16V 20% 12... |
TCFGA1C475M8R | ROHM Semicon... | -- | 1000 | CAP TANT 4.7UF 16V 20% 12... |
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TCFGP0J106M8R | ROHM Semicon... | 0.0 $ | 1000 | CAP TANT 10UF 6.3V 20% 08... |
TCFGP0J156M8R | ROHM Semicon... | 0.0 $ | 1000 | CAP TANT 15UF 6.3V 20% 08... |
TCFGP1A225M8R | ROHM Semicon... | 0.0 $ | 1000 | CAP TANT 2.2UF 10V 20% 08... |
TCFGP1A475M8R | ROHM Semicon... | 0.0 $ | 1000 | CAP TANT 4.7UF 10V 20% 08... |
TCFGP1C105M8R | ROHM Semicon... | 0.0 $ | 1000 | CAP TANT 1UF 16V 20% 0805... |
TCFGA0J106M8R | ROHM Semicon... | -- | 1000 | CAP TANT 10UF 20% 6.3V 12... |
TCFGA0J156M8R | ROHM Semicon... | 0.0 $ | 1000 | CAP TANT 15UF 20% 6.3V 12... |
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