Allicdata Part #: | 511-1676-2-ND |
Manufacturer Part#: |
TCFGB1E475M8R |
Price: | $ 0.23 |
Product Category: | Capacitors |
Manufacturer: | ROHM Semiconductor |
Short Description: | CAP TANT 4.7UF 25V 20% 1411 |
More Detail: | 4.7µF Molded Tantalum Capacitors 25V 1411 (3528 Me... |
DataSheet: | TCFGB1E475M8R Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
2000 +: | $ 0.20573 |
4000 +: | $ 0.20293 |
Operating Temperature: | -55°C ~ 125°C |
Failure Rate: | -- |
Features: | Fail Safe with Built-in Fuse |
Manufacturer Size Code: | B |
Lead Spacing: | -- |
Height - Seated (Max): | 0.083" (2.10mm) |
Size / Dimension: | 0.138" L x 0.110" W (3.50mm x 2.80mm) |
Package / Case: | 1411 (3528 Metric) |
Mounting Type: | Surface Mount |
Lifetime @ Temp.: | -- |
Series: | TCFG |
ESR (Equivalent Series Resistance): | -- |
Type: | Molded |
Voltage - Rated: | 25V |
Tolerance: | ±20% |
Capacitance: | 4.7µF |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Not For New Designs |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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Tantalum capacitors have a variety of potential applications, with the TCFGB1E475M8R having limited application fields and operating principles specifically suited to its design.
Tantalum capacitors are small, button-shaped electrical components capable of storing an electrical charge and are generally used in electronic circuits, with each one having a distinct capacitance value. With the TCFGB1E475M8R in particular, this component is a molded, radial lead device with operations that depend upon its unique construction.
Forming an integral part of the capacitor, the anode for this component is specifically composed of MnO2, which has both a high dielectric constant and low internal electrical resistance materials. This component is able to store a charge more efficiently due to the special capacitance effects through the output pressure of the MnO2, making the TCFGB1E475M8R a reliable component for stable electrical connections when it is placed in the desired circuit.
The cathode for TCFGB1E475M8R has a tantalum design that works as an effective barrier in preventing electrolyte leakage, which is an inherent problem in normal capacitors. During the manufacturing process, a layer of MnO2 is formed on top of the cathode, which essentially acts as a filter that prevents any unwanted flow of the electrolytes, again allowing the device to operate at a more stable level, thus increasing its lifespan and reliability.
Furthermore, the TCFGB1E475M8R’s capacitance values are created under a applied voltage, and the capacitor is able to retain its charge over a longer period of time. This element of the component is maintained by its thickness, allowing the charge to remain over time without relying upon any additional power sources.
The TCFGB1E475M8R has a wide range of application fields in the electronics industry, with its primary uses as an energy storage device in applications such as television receivers and motor starters. These capacitors are capable of withstanding rough conditions of high temperature, humidity and vibration, along with any on/off cycles, so they can be used in harsh environments won’t have any adverse effects on the capacitor.
Therefore this component can be used in many forms of mobile electronics, and is generally found in cellular phones and tablets to improve the efficiency of battery life. Due to its capacitance, this component can also be used in high frequency switching applications for alerts, alarms and sensors. Due to its reliability, the TCFGB1E475M8R has proven to be a recent addition to the world of electronics, and is one of the more promising components in the space. In summary, the TCFGB1E475M8R tantalum capacitor has limited application fields and working principle specifically tailored for its design, making it a reliable and efficient component for many electronic applications. This capacitor is composed of an anode that has a high dielectric constant and a low internal electrical resistance material, with MnO2 acting as an effective barrier to prevent electrolyte leakage. Additionally, the capacitance value of the TCFGB1E475M8R is created under an applied voltage and is able to retain its charge over a longer period of time. With these qualities, this component can be used in a variety of electronic devices, such as cellphones, tablets, motor starters and alarms, to provide reliable and efficient performance.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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TCFGB1C475M8R | ROHM Semicon... | 0.16 $ | 2000 | CAP TANT 4.7UF 16V 20% 14... |
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TCFGB1C106M8R | ROHM Semicon... | -- | 1000 | CAP TANT 10UF 16V 20% 141... |
TCFGB0J226M8R | ROHM Semicon... | 0.17 $ | 1000 | CAP TANT 22UF 6.3V 20% 14... |
TCFGB1C226M8R | ROHM Semicon... | 0.16 $ | 1000 | CAP TANT 22UF 16V 20% 141... |
TCFGB0J476M8R | ROHM Semicon... | 0.19 $ | 1000 | CAP TANT 47UF 6.3V 20% 14... |
TCFGB1C336M8R | ROHM Semicon... | 0.19 $ | 1000 | CAP TANT 33UF 16V 20% 141... |
TCFGB1A476M8R | ROHM Semicon... | 0.21 $ | 1000 | CAP TANT 47UF 10V 20% 141... |
TCFGB0G227M8R | ROHM Semicon... | 0.19 $ | 1000 | CAP TANT 220UF 4V 20% 141... |
TCFGB0J107M8R | ROHM Semicon... | 0.18 $ | 1000 | CAP TANT 100UF 6.3V 20% 1... |
TCFGB0J336M8R | ROHM Semicon... | 0.18 $ | 1000 | CAP TANT 33UF 6.3V 20% 14... |
TCFGB1C156M8R | ROHM Semicon... | 0.18 $ | 1000 | CAP TANT 15UF 16V 20% 141... |
TCFGB1C335M8R | ROHM Semicon... | -- | 1000 | CAP TANT 3.3UF 16V 20% 14... |
TCFGB1A106M8R | ROHM Semicon... | -- | 1000 | CAP TANT 10UF 10V 20% 141... |
TCFGB0G107M8R | ROHM Semicon... | 0.16 $ | 1000 | CAP TANT 100UF 4V 20% 141... |
TCFGB1C685M8R | ROHM Semicon... | 0.16 $ | 1000 | CAP TANT 6.8UF 16V 20% 14... |
TCFGB0J686M8R | ROHM Semicon... | 0.21 $ | 1000 | CAP TANT 68UF 6.3V 20% 14... |
TCFGA0G476M8R | ROHM Semicon... | 0.0 $ | 1000 | CAP TANT 47UF 4V 20% 1206... |
TCFGA0J226M8R | ROHM Semicon... | 0.0 $ | 1000 | CAP TANT 22UF 6.3V 20% 12... |
TCFGA0J336M8R | ROHM Semicon... | 0.0 $ | 1000 | CAP TANT 33UF 6.3V 20% 12... |
TCFGA1A106M8R | ROHM Semicon... | 0.0 $ | 1000 | CAP TANT 10UF 10V 20% 120... |
TCFGA1A156M8R | ROHM Semicon... | 0.0 $ | 1000 | CAP TANT 15UF 10V 20% 120... |
TCFGA1A226M8R | ROHM Semicon... | 0.0 $ | 1000 | CAP TANT 22UF 10V 20% 120... |
TCFGA1C105M8R | ROHM Semicon... | 0.0 $ | 1000 | CAP TANT 1UF 16V 20% 1206... |
TCFGA1C106M8R | ROHM Semicon... | 0.0 $ | 1000 | CAP TANT 10UF 16V 20% 120... |
TCFGA1C335M8R | ROHM Semicon... | 0.0 $ | 1000 | CAP TANT 3.3UF 16V 20% 12... |
TCFGA1C475M8R | ROHM Semicon... | -- | 1000 | CAP TANT 4.7UF 16V 20% 12... |
TCFGA1D105M8R | ROHM Semicon... | 0.0 $ | 1000 | CAP TANT 1UF 20V 20% 1206... |
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TCFGP0J106M8R | ROHM Semicon... | 0.0 $ | 1000 | CAP TANT 10UF 6.3V 20% 08... |
TCFGP0J156M8R | ROHM Semicon... | 0.0 $ | 1000 | CAP TANT 15UF 6.3V 20% 08... |
TCFGP1A225M8R | ROHM Semicon... | 0.0 $ | 1000 | CAP TANT 2.2UF 10V 20% 08... |
TCFGP1A475M8R | ROHM Semicon... | 0.0 $ | 1000 | CAP TANT 4.7UF 10V 20% 08... |
TCFGP1C105M8R | ROHM Semicon... | 0.0 $ | 1000 | CAP TANT 1UF 16V 20% 0805... |
TCFGA0J106M8R | ROHM Semicon... | -- | 1000 | CAP TANT 10UF 20% 6.3V 12... |
TCFGA0J156M8R | ROHM Semicon... | 0.0 $ | 1000 | CAP TANT 15UF 20% 6.3V 12... |
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