Allicdata Part #: | TDC106M025NSF-ND |
Manufacturer Part#: |
TDC106M025NSF |
Price: | $ 0.00 |
Product Category: | Capacitors |
Manufacturer: | Cornell Dubilier Electronics (CDE) |
Short Description: | CAP TANT 10UF 25V 20% RADIAL |
More Detail: | 10µF Conformal Coated Tantalum Capacitors 25V Radi... |
DataSheet: | TDC106M025NSF Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
1 +: | 0.00000 |
Operating Temperature: | -55°C ~ 125°C |
Failure Rate: | -- |
Features: | General Purpose |
Manufacturer Size Code: | F |
Lead Spacing: | 0.125" (3.18mm) |
Height - Seated (Max): | 0.500" (12.70mm) |
Size / Dimension: | 0.250" Dia (6.35mm) |
Package / Case: | Radial |
Mounting Type: | Through Hole |
Lifetime @ Temp.: | -- |
Series: | TDC |
ESR (Equivalent Series Resistance): | -- |
Type: | Conformal Coated |
Voltage - Rated: | 25V |
Tolerance: | ±20% |
Capacitance: | 10µF |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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.Tantalum capacitors, also known as Ta-capacitors, are widely used passive components. They are available in three major varieties – wet and dry type electrolytic capacitors, and solid state tantalum capacitors. The TDC106M025NSF is a rated high voltage solid state tantalum capacitor and its popular application fields include power supply decoupling, filtering and energy storage in DC-DC converters. It is also used to stabilize operating temperatures and reduce audio noise in electronic circuits.
Tantalum capacitors differ from electrolytic capacitors as they don\'t contain liquid electrolyte, therefore they have greater stability and longer life than electrolytic capacitors. The solid dielectric used in tantalum capacitors is either Ta2O5 or Niobium pentoxide. The anode of the tantalum capacitor is manufactured from powdered tantalum and the anode is coated with a conductive layer of manganese dioxide. A layer of silicone dioxide is then formed over the conductive manganese dioxide layer.
The working principle of the TDC106M025NSF capacitor can be explained as follows. The positive electrode of the capacitor is the manganese dioxide coating, and the negative electrode consists of the Ta2O5 or Niobium pentoxide dielectric material. When a voltage is applied to the capacitor, due to the electric field, positive ions move from the manganese dioxide anode to the Ta2O5 or Niobium pentoxide cathode. This transfer of ions creates a charge imbalance, resulting in the accumulation of potential energy.
The stored energy in the capacitor can subsequently be released into the circuit, thus providing current to the circuit. Thus, a tantalum capacitor is used to store a charge temporarily, and provide electrical energy or current on demand. The TDC106M025NSF capacitor is capable of storing a large amount of charge and the charge leakage rate is particularly low. In fact, this capacitor has a typical equivalent series resistance of 0.0015 ohms, and a maximum leakage current of 0.1 microamps.
The TDC106M025NSF capacitor has a wide range of applications in the field of RF design. It has a voltage rating of 25 volts and a capacitance of 10 microfarads. It is used to stabilize operating voltage levels, improve amplification rates, and decrease signal noise. It is also used in power supplies to reduce ripple, provide line isolation and reduce heat buildup. The capacitor also reduces conductive stray EM fields as it is encased in a metal box.
In conclusion, the TDC106M025NSF is a low ESR tantalum capacitor which has a wide range of applications in RF design, power supplies, and portable electronics. Its major advantages include high capacitance, low RC, temperature stable operating performance, shock resistance, and long life. Furthermore, its low equivalent series resistance means less power loss in the circuit. Therefore, it is an excellent choice for many different projects.
The specific data is subject to PDF, and the above content is for reference
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