TDZTR13 Allicdata Electronics

TDZTR13 Discrete Semiconductor Products

Allicdata Part #:

TDZTR13TR-ND

Manufacturer Part#:

TDZTR13

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: DIODE ZENER 13V 500MW TUMD2
More Detail: Zener Diode 13V 500mW ±10% Surface Mount TUMD2
DataSheet: TDZTR13 datasheetTDZTR13 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Voltage - Zener (Nom) (Vz): 13V
Tolerance: ±10%
Power - Max: 500mW
Current - Reverse Leakage @ Vr: 10µA @ 9V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: TUMD2
Base Part Number: TDZ13
Description

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TDZTR13 Application Field and Working Principle

A TDZTR13 diode is an economical zener diode that is capable of voltage regulation and power management over a wide range of current and voltage requirements. Its wide operating range makes it ideal for many circuits, such as high-voltage protection, data signal line protection, low-voltage regulation, non-inverting rectification, and handling transient surges. Additionally, the TDZTR13’s wide clamping voltage range and fast response time make it suitable for protecting sensitive phone circuits and other items from electrostatic discharge (ESD) damage.

Structure Overview

The TDZTR13 diode is a single zener diode that is constructed using a semiconductor material, usually a P-type or N-type, sandwiched between two inner core and outer contacts. The contact materials used are usually nickel plated copper, gold, or silver depending on the type of substrate used for the application. The contacts also contain a junction barrier to provide protection from reverse-transient effects. The diode is enclosed in an epoxy coating, which helps protect it from environmental and mechanical shock.

Working Principle

The working principle of the TDZTR13 diode revolves around its breakdown voltage, which is determined by the P-N junction of the semiconductor material. When a forward voltage is applied to the diode, the current begins to flow based on the strength of the voltage. As the forward voltage reaches the breakdown voltage, an avalanche of electrons occur, and the diode saturates, meaning its current flow skyrockets and its impedance drops sharply. After the maximum current is reached, the voltage across the diode stabilizes and further current flow is limited.

When the current flow increases, the breakdown voltage of the TDZTR13 diode reduces, and it is able to withstand a high overload without failing. This makes it ideal for applications where power overloads are expected. In addition to this, the diode’s low forward drop makes it suitable for applications where low-voltage requirements are necessary.

Applications

The TDZTR13 is a versatile diode that is used for a variety of purposes. It is commonly used for PTC and fuse protection, overvoltage and undershoot protection, power supply sequencing, ESD protection, and light regulation in LED circuits. It is also used for peak current limiter applications, battery management and backup, inverter protection in SMPSs, low-voltage protection, linear voltage regulator reference circuit, and many other types of protection.

The TDZTR13 diode is a cost-effective choice for many applications and is used widely in consumer electronics, automotive and industrial applications that require reliable high-current and high-voltage protection. With its low forward voltage drop and high current capability, it is often the preferred choice for power management and regulation circuits.

Conclusion

The TDZTR13 diode is a highly versatile and cost-effective solution for many high-current and high-voltage applications, such as power supply sequencing, PTC and fuse protection, ESD protection, and light regulation. Its low forward voltage drop, high current capability, and wide breakdown voltage range make it well-suited for many types of applications, from consumer electronics to industrial applications.

The specific data is subject to PDF, and the above content is for reference

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